Preparation of Bi4Ti3O15 Ceramics with Nd-Doping and Its Electric Properties

FAN Su-hua,XU Jing,ZHANG Feng-qing,GUO Gui-fen,REN Yan-xia
DOI: https://doi.org/10.3969/j.issn.1671-3559.2007.01.003
2007-01-01
Abstract:Bi_(4-x)Nd_xTi_3O_(12)(x=0,0.25,0.5,0.75,1) layered bismuth-based lead-free dielectric ceramics were fabricated by the solid-synthesis.The effects of the amount of Nd doping,sintering temperature and annealing time on BNT ceramics' crystal structure,microstructure and dielectric properties have been analyzed by XRD,SEM and LCR meter.The results indicated that the BNT ceramics with Nd doping of 0.75% annealed at 1?050?℃for 4 hours exhibited good dielectric properties.
What problem does this paper attempt to address?