Low-temperature dielectric anomaly in Bi 0.5 K 0.5 TiO 3

Yongxing Wei,Ning Zhang,Gang Xu,Changqing Jin,Lin Hu,Ling Gao,Zengyun Jian,Weitong Zhu

DOI: https://doi.org/10.1007/s00339-019-2930-0

2019-01-01

Applied Physics A

Abstract:Here, we report our studies on Bi 0.5 K 0.5 TiO 3 (BKT) prepared by conventional solid-state reaction method and two-step sintering method to further understand the dielectric dispersion around room temperature. The coexistence of the tetragonal and cubic phases is confirmed. Most importantly, we find an extra dielectric loss anomaly around –100 °C. The polarization response suggests the contribution of the hysteresis-free polarization. Correspondingly, a Raman-active mode around 75 cm −1 is frozen on cooling. A model is proposed to interpret the origin of the low-temperature dielectric anomaly.