Abstract:Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were prepared on platinum coated silicon substrate by chemical solution deposition. The layered-perovskite phase was obtained by rapid thermal annealing the spin-on films at 650 or 700 °C for 180 s. Scanning electron micrographs showed uniform surfaces composed of spherical grains. The grain size increased with increasing annealing temperature. The remanent polarization and coercive field of 650 °C annealed film were 12.3 μC/cm2 and 48.9 kV/cm, respectively, and those of 700 °C annealed films were 18.2 μC/cm2 and 51.1 kV/cm. BLT thin films showed little polarization fatigue under 250 kV/cm bipolar cycling at 50 kHz, while fatigue properties deteriorated with decreasing cycling field and frequency. At various frequencies from 1 Hz to 50 kHz, nonvolatile polarization Pnv showed nearly no degradation over an initial period of cycling, then decayed logarithmically with switching cycles. The onset of logarithmic decay of Pnv was found to increase linearly with cycling frequency. The cycling field dependence of fatigue characteristics was interpreted in terms of competition of charge trapping which blocks the domain switching and field-assisted detrapping of charged defects which set the locked domains free. Frequency dependent fatigue properties were discussed on the basis of drift and aggregation of oxygen vacancies.

Dielectric Characterization of Bi3.25la0.75ti3o12 Thin Films

Leakage Current Characteristics of Pt∕Bi3.25La0.75Ti3O12∕Pt Thin-Film Capacitors

Structure and Electrical Properties of Bi3.15nd0.85ti3o12 Ferroelectric Thin Films

Preparation and Electrical Properties of Bi 3.25 Pr 0.75 Ti 3 O 12 Ferroelectric Thin Films

Temperature-dependent Ferroelectric and Dielectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Investigation on Annealing and Etching Effects for Pt/Bi3.15nd0.85ti3o12/Pt Ferroelectric Capacitors

Electrical Properties of Chemical-Solution-derived Bi3.54Nd0.46Ti3O12 Ferroelectric Thin Films

Microstructure and Ferroelectric Properties of Ta-doped Bi3.25La0.75Ti3O12/ZnO Thin Film Capacitors

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Prepared by Chemical Solution Deposition

La-Doped Effect On The Ferroelectric Properties Of Bi4ti3o12-Srbi4ti4o15 Thin Film Fabricated By Pulsed Laser Deposition

Effects of Interface on the Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Film Capacitors

Structure and Dielectric Properties of Barium Titanate Thin Films for Capacitor Applications

Microstructure And Ferroelectric Properties Of Sol-Gel Derived Bi3.15nd0.85ti3o12 Thin Films On Pt/Ti/Sio2/Si(100)

Why Lanthanum-Substituted Bismuth Titanate Becomes Fatigue Free in A Ferroelectric Capacitor with Platinum Electrodes

Structural and Electrical Properties of Bi3.25la0.75ti3o12 and Bi3.25pr0.75ti3o12 Thin Films for Memory Applications

0.75Srbi2ta2o9-0.25Bi3titao9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties

Temperature-dependent Ferroelectric Properties of (pb0.75la0.25)tio3 Thin Films

Ferroelectric Properties Of La And Zr Substituted Bi4ti3o12 Thin Films

Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

Dielectric Characteristics and Thermal Stability of Ba6−3xNd8+2xTi18O54 Thin Films Prepared by Pulsed Laser Deposition