Dielectric Characteristics and Thermal Stability of Ba6−3xNd8+2xTi18O54 Thin Films Prepared by Pulsed Laser Deposition

YD Xia,GH Shi,D Wu,ZG Liu

DOI: https://doi.org/10.1016/j.tsf.2004.07.055

IF: 2.1

2005-01-01

Thin Solid Films

Abstract:Ba6−3xNd8+2xTi18O54 with x=0.25 (simply BNT) dielectric thin films with a thickness of 320 nm have been prepared by pulsed laser deposition. The analysis results of X-ray diffraction showed that the as-deposited BNT films are amorphous, and the amorphous state is stable against a postannealing at temperature up to 850 °C. The dielectric constant of the BNT films has been determined to be about 80 with a low loss tan δ of about 0.006 at 1 MHz. The frequency dependence of the capacitance–voltage characteristics of BNT metal–insulator–metal capacitors is investigated. With the frequency increasing, the BNT capacitors showed gradually enhanced capacitor nonlinearity, which can be attributed to the Pt/BNT interface traps.