Dielectric Properties of Low Loss Ba 6−3x Nd 8+2x Ti 18 O 54 Thin Films Prepared by Pulsed Laser Deposition for Microwave Applications

Y. D. Xia,G. H. Shi,D. Wu,Z. G. Liu

DOI: https://doi.org/10.1007/s11664-004-0127-5

IF: 2.1

2004-01-01

Journal of Electronic Materials

Abstract:Ba6−3xNd8+2xTi18O54 with x=0.25 (BNT-0.25, or simply, BNT) dielectric thin films with a thickness of 320 nm have been prepared on Pt-coated silicon substrates by pulsed laser deposition (PLD) at the substrate temperature of 650°C in 20 Pa oxygen ambient. X-ray analysis showed that the as-deposited films are amorphous and the films remain amorphous after a postannealing at 750°C for 30 min. The dielectric constant of the BNT films has been determined to be about 80 with a low loss tan δ of about 0.006 at 1 MHz. The capacitance-voltage (C-V), capacitance-frequency, and capacitance-temperature characteristics of a BNT capacitor with Pt top electrode were measured. A low leakage-current density of 4×10−6 A/cm2 at 6 V was measured, and a preliminary discussion of the leakage-current mechanism is also given. It is proposed that amorphous BNT-0.25 thin films will be a potential dielectric material for microwave applications.