Abstract:Thin films of BaxSr1-xTiO3 (BST) serial materials have the advantages of adjustable tunability and are good candidates for the application in DRAM and microwave devices. However, these films usually have loss tangent higher than the order of 0.01 at microwave frequencies. To improve the crystal structures and suppress the microwave losses, an interlayer material with good microwave properties can be used. In this present work, a low loss Ba(Mg1/3Ta2/3)O-3 (BMT) thin buffer layer with varying thickness and its effect on the microwave properties of Ba0.4Sr0.6TiO3 thin films is investigated. Moreover, to overcome the spatial limit in the traditional microwave measurement, a novel technique, evanescent microwave probe (EMP) method, is used to directly probe the microwave dielectric properties of the films. This technique also provides the capability to study the dielectric mechanism in micro-scale region.Pulsed laser deposition technique was used to synthesize thin films. The films shows (111) preferably oriented growth of BST films with the introduction of BMT layer for the films grown on sapphire substrates. As the thickness of BMT increases, this behavior is more obvious. The microwave dielectric constants (epsilon) and dielectric losses (tan delta) of the films grown on sapphire substrates have been measured by EMP. The dielectric constants of BST thin films decrease monotonously with the increase of BMT thickness. In contrast, the tan delta shows a discontinuity variation when the BMT buffer layer is deposited for 10-20 minutes.

Properties of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed-Laser Deposition

Pulsed Laser Deposited Ba(Mg1/3Ta2/3)O3 Microwave Dielectric Thin Films

Dielectric Properties of Bati2o5 Thick Films Prepared on Pt-Coated Mgo (110) Single-Crystal Substrate by Laser Chemical Vapor Deposition

Structural and Optical Properties of the Ba(Mg1/3ta2/3)O-3 Thin Films Prepared by Pulsed Laser Deposition

Characteristics of Ba(Mg1∕3Ta2∕3)O3 Thin Films Prepared by Pulsed Laser Deposition Process and Their Effect on the Growth of Pb(Zr1−xTix)O3 Thin Films

Microwave Dielectric Characteristics of Ba(Mg1/3Ta2/3)O3 Ceramics Sintered at Low-Temperatures

Microwave Properties of Bst and Bst/Bmt Thin Films Grown on Sapphire Substrate by Evanescent Microwave Probe

Growth, Structure And Dielectric Characteristics Of Ba[(Fe1/2nb1/2)(0.1)Ti-0.9]O-3 Thin Films By Pulsed Laser Deposition

Microstructure and microwave dielectric properties of Ba([Mg 1− x Zn x ] 1/3 Ta 2/3 )O 3 solid solution ceramics

Microwave Dielectric Properties of Ba[Mg(1−x)/3Sn X Ta2(1−x)/3]O3 (x = 0–0.25) Ceramics

In-plane Dielectric Properties of Epitaxial 0.65pb(mg1∕3nb2∕3)o3−0.35pbtio3 Thin Films in a Very Wide Frequency Range

Dielectric Properties Of Ba0.6sr0.4tio3 Thin Films Deposited By Mist Plasma Evaporation Using Aqueous Solution Precursor

Xrd and Raman Studies on the Ordering/Disordering of Ba(Mg1/3ta2/3)O-3

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1−x)Ba(Mg1/3Nb2/3)O3–xBaSnO3 Solid Solutions

Perpendicularly Oriented Barium Ferrite Thin Films with Low Microwave Loss, Prepared by Pulsed Laser Deposition

PLD Epitaxial Thin‐Film BaTiO3 on MgO − Dielectric and Electro‐Optic Properties

Characteristics of Pb(Zr, Ti)O3 Thin Films Deposited on Pt(Si) at Low Substrate Temperature by Using Ba(Mg1/3Ta2/3)O3 As Buffer Layer

Enhanced electrical properties of multilayer Ba(Zr 0.2 Ti 0.8 )O 3 /Ba 0.6 Sr 0.4 TiO 3 /Ba(Zr 0.2 Ti 0.8 )O 3 thin films for tunable microwave applications

Dielectric Properties of Low Loss Ba 6−3x Nd 8+2x Ti 18 O 54 Thin Films Prepared by Pulsed Laser Deposition for Microwave Applications

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Preparation and Structure of Ba(Mg 1/3 Ta 2/3 )O 3 Thin Films Derived from a Sol-Gel Process