Leakage current characteristics of SrTiO3/LaNiO3/Ba0.67Sr0.33TiO3/SrTiO3 heterostructure thin films
Yi Zhang,Xiao-Yang Chen,Bin Xie,Zhi Wang,Ming-Jian Ding,Qiao He,Hang Ji,Tao-Lan Mo,Ping Yu
DOI: https://doi.org/10.1007/s12598-020-01497-z
IF: 6.318
2020-07-17
Rare Metals
Abstract:<p class="a-plus-plus">There is an urgent demand to explore new approaches of improving the electric breakdown strength of the ferroelectric thin-film capacitor without the degradation of the high dielectric constant. In this work, LaNiO<sub class="a-plus-plus">3</sub>/Ba<sub class="a-plus-plus">0.67</sub>Sr<sub class="a-plus-plus">0.33</sub>TiO<sub class="a-plus-plus">3</sub> (LNO/BST) thin film and SrTiO<sub class="a-plus-plus">3</sub>(STO)/LNO/BST/SrTiO<sub class="a-plus-plus">3</sub> (STO) were prepared by using radio frequency (RF) magnetron sputtering technique and ultrathin STO insulator layers were inserted between the LNO/BST and metal electrodes (Au or Pt) to improve the electric breakdown strength and the leakage current of the LNO/BST thin film. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that these multilayer thin films show compact, smooth and uniform morphologies. The leakage current density of STO/LNO/BST/STO thin film was decreased by one order of magnitude and breakdown strength of STO/LNO/BST/STO thin film was enhanced from 0.72 to 1.26 MV·cm<sup class="a-plus-plus">−1</sup> compared with that of LNO/BST thin film. Moreover, the dielectric constant of the STO/LNO/BST/STO thin film keeps at the same level as that of LNO/BST thin film, and dielectric loss of the STO/LNO/BST/STO thin film was decreased slightly compared with that of LNO/BST thin film.</p>
materials science, multidisciplinary,metallurgy & metallurgical engineering