Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb 2 O 3 /GaSb MOS Capacitors with ALD-Driven Laminated Interlayers
Lin Hao,Gang He,Ganhong Zheng,Qian Gao,Lesheng Qiao,Zebo Fang
DOI: https://doi.org/10.1021/acsaelm.0c00988
IF: 4.494
2021-02-10
ACS Applied Electronic Materials
Abstract:In this report, the impact of atomic-layer-deposition-derived different laminated gate stacks on the interface chemistry and electrical performance of Yb<sub>2</sub>O<sub>3</sub>/GaSb metal-oxide-semiconductor (MOS) capacitors has been investigated comparatively. X-ray photoelectron spectroscopy measurements and electrical characterization have revealed the existence of less native oxides and elemental Sb at the Yb<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/GaSb interface, as well as the optimized frequency dispersion and the minimum leakage current density of 2.25 × 10<sup>–7</sup> A/cm<sup>2</sup>. Meanwhile, conductance–voltage analyses are carried out to determinate the distribution of interface-state density (<i>D</i><sub>it</sub>) in the entire GaSb band gap. It has been found that an ultrathin Al<sub>2</sub>O<sub>3</sub> layer prior to Yb<sub>2</sub>O<sub>3</sub> deposition can effectively delay the generation of the interface state, and the lowest <i>D</i><sub>it</sub> value of 8.7 × 10<sup>12</sup> cm<sup>–2</sup> eV<sup>–1</sup> for the Al/Yb<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/GaSb capacitor has been achieved. The possible carrier conduction mechanisms for GaSb-based MOS capacitors with different laminated structures measured at room temperatures and low temperatures have also been systematically analyzed. All the results have indicated that the Yb<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/GaSb gate stack is a promising candidate for future GaSb-based metal-oxide-semiconductor field-effect transistor devices.This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic