Improvement in Leakage Current and Breakdown Field of Cu-Comb Capacitor Using a Silicon Oxycarbide Dielectric Barrier
Chiu-Chih Chiang,I-Hsiu Ko,Mao-Chieh Chen,Zhen-Cheng Wu,Yung-Cheng Lu,Syun-Ming Jang,Mong-Song Liang
DOI: https://doi.org/10.1149/1.1777510
IF: 3.9
2004-01-01
Journal of The Electrochemical Society
Abstract:This work investigates in the first place, the improvement in leakage current and breakdown field of the copper metal-insulator-semiconductor (Cu-MIS) capacitor with a plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon oxycarbide (α-SiCO, k=3.7) dielectric barrier. This is followed by investigating the improvement in leakage current and breakdown field of the Cu-comb capacitor with a carbon-doped low-k PECVD organosilicate glass (k=3) as the intermetal dielectric and an α-SiCO dielectric film as the Cu cap barrier. The leakage current and breakdown field of Cu-MIS and Cu-comb capacitors are dependent on the species of the dielectric barrier. The Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier exhibit a leakage current at least three orders of magnitude smaller than those with an amorphous silicon carbide (α-SiC, k=4.4) dielectric barrier at an applied electric field of 1.6 MV/cm between 25 and 250°C. Moreover, the breakdown field of the Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier, measured at 200°C, are 60 and 25%, respectively, higher than that of the capacitors with an α-SiC barrier. The decreased leakage current and increased breakdown field of the Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier are attributed to the higher density, oxygen-improved film property, non-semiconductor behavior, and lower fringe- or surface-electric field of the α-SiCO dielectric film. © 2004 The Electrochemical Society. All rights reserved.
electrochemistry,materials science, coatings & films