Abstract:The electrical characteristics of Ni electrode-based metal-insulator-metal (MIM) capacitors have been investigated with atomic layer deposited ZrO2/SiO2/ZrO2 symmetric stacked-dielectrics. When the thickness of the stacked-dielectrics is fixed at 14 nm, the resulted capacitance density decreases from 13.1 fF/m(2) to 9.3 fF/m(2), and the dissipation factor is reduced from 0.025 to 0.02. By comparison of current-voltage (I-V) curves of different MIM capacitors, it is found that the leakage current density in the high voltage region decreases gradually with the increasing thickness of SiO2, and it does not exhibit clear change in the low voltage region. Meanwhile, the capacitors show different conduction behaviors under positive and negative biases with increasing the thickness of SiO2 from 0 to 2 nm. Under the positive bias, different I-V characteristics are demonstrated at high and low electric fields, respectively. However, a single I -V characteristic is dominant under the negative bias. Further, the conduction mechanisms of the capacitors are investigated under the electron bottom and top injection modes, respectively. It is found that the Poole-Frenkel emission and the trap-assisted tunneling are dominant in the high and low field regions, respectively, for the electron bottom injection; however, the trap-assisted tunneling is dominant in the whole field region for the electron top injection. These are attributed to the formation of a thin NiOx interfacial layer between the Ni bottom-electrode and the ZrO2 dielectric layer, as well as the existence of both deep and shallow level traps (0.9 and 2.3 eV) in the ZrO2 dielectric. Therefore, the level trap plays a key role in the electron conduction in the MIM capacitor under different electron injection modes and different electric fields.

Influence of Ta and TaN Bottom Electrodes on Electrical Performances of MIM Capacitors with Atomic-Layer-deposited HfO2 Dielectric

High Density Al2O3/TaN-based Metal–insulator–metal Capacitors in Application to Radio Frequency Integrated Circuits

The Variation of the Leakage Current Characteristics of W/Ta2O5/W MIM Capacitors with the Thickness of the Bottom W Electrode

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited Hfo2 Dielectrics for Radio Frequency Integrated Circuit Application

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Atomic-layer-deposited Al2O3-HfO2 Laminated and Sandwiched Dielectrics for Metal–insulator–metal Capacitors

High-Temperature Conduction Behaviors of Hfo2/Tan-Based Metal-Insulator-Metal Capacitors

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

I-V Characteristics of Tantalum Oxide Film and the Effect of Defects on Its Electrical Properties

Electrical Characteristics and Conduction Mechanisms of Metal-Insulator-Metal Capacitors with Nanolaminated Al(2)O(3)-Hfo(2) Dielectrics

Conduction Mechanisms of Mim Capacitors with Zro2/Sio2/Zro2 Stacked Dielectrics and Ni Electrodes

Reactively sputtered HfO2 and Ba(Zr0.2Ti0.8)O 3-HfO2 dielectrics for metal-insulator-metal capacitor applications

I-V Characteristics of High Dielectric Constant Tantalum Oxide Films

A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics

The Role Of Terminations And Coordination Atoms On The Pseudocapacitance Of Titanium Carbonitride Monolayers

Metal-insulator-metal Capacitors Using Atomic-Layer-deposited Al2O3∕HfO2∕Al2O3 Sandwiched Dielectrics for Wireless Communications

Comparison of Electrical Performances of Metal-Insulator-metal Capacitors with Sputtered HfO2 and BZT-HfO2 Dielectrics

High-performance MIM Capacitor Using ALD High-K HfO2-Al2O3 Laminate Dielectrics

A comparison study of high-density MIM capacitors with ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminated, sandwiched and stacked dielectrics