I-V Characteristics of High Dielectric Constant Tantalum Oxide Films

王超,庄大明,张弓,吴敏生
DOI: https://doi.org/10.3321/j.issn:1005-3093.2003.03.019
2003-01-01
Abstract:Tantalum Pentoxide (Ta2O5) films were prepared by pulsed DC reactive magnetron sputtering method. Ta/Tantalum Pentoxide/Ta (MIM) structure was fabricated to investigate the I-V characteristics of tantalum oxide films. I-V characteristics of MIM with different top-electrode areas were investigated. The results showed that the electrical properties get deterioration with the increase of top-electrode area. Zero shifting of I-V curves was found. The study showed that the roughness of the substrate and films, and defects in the films greatly affected the quality and I-V characteristics of MIM capacitors.
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