Cacu3ti4o12 Films Prepared by Magnetron Sputtering

Xl Zhou,Py Du

IF: 0.906

2005-01-01

Acta Physica Sinica

Abstract:Thin CaCu3Ti4O12 ceramic films have been successfully fabricated by a magnetron sputtering method and the surface morphology, microstructure and dielectric property of the samples have been measured by using atom force microscope, x-ray diffractometer (XRD) and LCR meter. XRD patterns show that the lattice constant of the films is less than that of the bulk materials, while the distortion of the lattice in the films is comparatively larger. LCR results show that the relative dielectric constant of the films is lower than that of the bulck materials at fixed temperature, and the temperature at which the dielectric constant transits abruptly is higher and the activation energy of the films,,is larger. Further analysis shows that the lower crystallinity and more defects in the samples result in the rapid decrease of the barrier layer capacity and film density, which should be responsible for the lower relative dielectric constant. The increase of the activation energy in the samples depends mainly on the factors such as internal stress, microstructure, defect and domain etc. The rapid increase of the dielectric constant in lower frequency range implies that there exists interface polarized phenomenon in the samples, which is related to the defects and dangling bonds on the interface.