Influence of sintering temperature on giant dielectric property of CaCu3Ti4O12

XiaoLi Zhou,Piyi Du

2006-01-01

Abstract:Giant dielectric properties of CaCu3Ti4O12 ceramic disc, prepared by solid reaction, were studied in a temperature ranging from 50 K to 300 K.Its surface microstructures were characterized with scanning electron microscopy (SEM). The results show that various factors, such as the crystallinity of CaCu3Ti4O12 grains, grain boundaries, defects and pores, significantly affect the dielectric properties of the ceramic to a varying degree, including the relative maximum dielectric constant, the critical temperature of low-high dielectric constant transition as well as the temperature dependence of polarized ion relaxation. As the densities of grain boundary and defect reduce, the relaxation temperature of the polarized ion drops down because interaction of defects and polarized ions weakens, decreasing the relaxation potential barrier. We suggest that the better the grain crystallinity, the weaker the temperature dependence of relaxation and the faster the low-high dielectric constant transition.