Abstract:Copper titanate (CaCu3Ti4O12, or CCTO) ceramics sintered in oxygen and vacuum at 1100°C for 12 h have been treated by thermobaric treatment (TBT) at 9 GPa and 1000°C for 10 min and then quenched in liquid nitrogen (LN2). Pure cubic body-centered perovskite-related structure was confirmed from XRD results. Besides, after TBT and quenching, additional minor peaks of TiO2 and Cu were indexed, as well as a little cell volume expansion. A little reduction of the grain size as well as fuzzy grain boundaries can be observed in FE-SEM after TBT. The dielectric constant ε' of CCTO ceramics sintered in oxygen (∼4600 @ 100 Hz) were a half of those treated by TBT and quenching (∼9600 @ 100 Hz), whereas the value decreased almost by an order of magnitude (from 105 to 104) after TBT and quenching for the samples sintered in vacuum. The complex impedance spectra at high temperature showed three semicircles so a three RC model was used to explain the different relaxation regions consisting of grain, grain boundary and domain boundary. Besides, two relaxation peaks appeared in the frequency dependence of the imaginary part of the electric modulus formalism M⁎ and the complex impedance Z⁎. Moreover, the contributions of grain boundaries can be figured out by the relaxation activation energy Ere (338–629 meV) and the conduction one Edc (396–823 meV) fitted by M⁎ and Z⁎ plots separately. As a result, the disorder and heterogeneity typical of grain boundaries should be responsible for the giant dielectric relaxation characteristics of CCTO ceramics, which can be affected by the sintering atmosphere as well as the extreme treating conditions.

Grain-boundary and subgrain-boundary effects on the dielectric properties of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> ceramics

Influence of sintering temperature on giant dielectric property of CaCu3Ti4O12

Characterization of Individual Grain Boundaries and Grains of CaCu 3 Ti 4 O 12 Ceramic

Conducting Grain Boundaries In The High-Dielectric-Constant Ceramic Cacu3ti4o12

Effect of grain boundary segregation on dielectric properties of CaCu3Ti4O12 ceramics

Grain Boundary Behavior in Varistor-Capacitor Tio2-Rich Cacu3ti4o12 Ceramics

Characterization of grain boundary impedances in fine- and coarse-grained Ca Cu 3 Ti 4 O 12 ceramics

Investigation of the Size Effect on the Giant Dielectric Constant of CaCu 3 Ti 4 O 12 Ceramic

Effect of Oxygen Content on Giant Dielectric Constant and Dielectric Process in Cacu3ti4o12

Electrical properties and microstructural characteristics of nonstoichiometric CaCu3xTi4O12 ceramics

Investigation Of Size Effect On The Giant Dielectric Cacu3ti4o12 Ceramic

Microstructure-dependent Giant Dielectric Response in CaCu3Ti4O12 Ceramics

Observation of giant dielectric constant in CdCu3Ti4O12 ceramics

Decrease of Dielectric Loss in Giant Dielectric Constant CaCu3 Ti4 O12 Ceramics by Adding CaTiO3

Grain Boundary Effect on Dielectric Properties of (nd0.5nb0.5) Ti1-O2 Ceramicsceamics

Influence of Sintering Atmosphere and Thermobaric Treatment (TBT) on Dielectric Behaviors of CaCu3Ti4O12 Ceramics

Effect of Cooling Rate on the Properties of the Grain Boundary of CaCu3Ti4O12 Ceramic

Microstructure and Dielectric Properties of CaCu3Ti4O12 Ceramics by Quenching after Sintering in Low Vacuum and Thermobaric Treatment at 9 GPa

A novel route to lower the dielectric loss in CaCu$_{3}$Ti$_{4}$O$_{12}$ ceramics

Real space imaging of the microscopic origins of the ultrahigh dielectric constant in polycrystalline CaCu3Ti4O12

Microstructure and Dielectric Properties of Ca1–3/2xBixCu3Ti4O12 (x = 0, 0.05, 0.10, 0.15 and 0.20) Ceramics