Abstract:The formation and compositions of grain boundary layers are very important factors to improve the electrical properties of CaCu3Ti4O12 (CCTO) ceramics. In present work, the dielectric and nonlinear properties of the CCTO ceramics are enhanced by controlling the Cu-rich phase degree at grain boundary layers. The dense CCTO ceramics were prepared successfully through mixing the nanometer and micrometer powders and using the cold isostatic pressing process. The average grain size of these CCTO ceramics is about 30.71(+/- 11.76) similar to 62.01(+/- 32.16) mu m, and their grain microstructures show the Cu-rich phases at grain boundary layers. The CCTO ceramics with the mass ratios of nanometer and micrometer powders 7:3 display a giant dielectric constant of 5.4 x 10(4), low dielectric loss of 0.048 at 10(3) Hz, enhanced nonlinear coefficients of 11.12, as well as the noteworthy breakdown field of 4466.17 V/cm. The complex impedance spectroscopy results indicate that the giant dielectric behavior is due to the electrically heterogeneous grain/grain boundary characteristics from internal barrier layer capacitance (IBLC) model. The lower dielectric loss and the higher breakdown field are attributed to the high resistance grain boundary layers with the Cu-rich phase. The improved nonlinear properties are related to the increased Schottky barrier height at grain boundary. This work may provide a potential way to design the CCTO ceramics with excellent electrical properties from the viewpoint of controlling the response of the Cu-rich phase grain boundary.

Conducting Grain Boundaries In The High-Dielectric-Constant Ceramic Cacu3ti4o12

Grain-boundary and subgrain-boundary effects on the dielectric properties of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> ceramics

Characterization of grain boundary impedances in fine- and coarse-grained Ca Cu 3 Ti 4 O 12 ceramics

Microstructure and Dc Conduction Properties of Cacu3 Ti4o12

Grain Boundary Behavior in Varistor-Capacitor Tio2-Rich Cacu3ti4o12 Ceramics

The dimensional effect of dielectric performance in CaCu 3 Ti 4 O 12 ceramics: Role of grain boundary

Improved Dielectric and Nonlinear Properties of CaCu3Ti4O12 Ceramics with Cu-rich Phase at Grain Boundary Layers

Effect of Barrier Capacity on Dielectric Characteristics of Acu(3)Ti(4)O(12) Ceramics

Characterization of Individual Grain Boundaries and Grains of CaCu 3 Ti 4 O 12 Ceramic

Influence of sintering temperature on giant dielectric property of CaCu3Ti4O12

Colossal Breakdown Electric Field and Dielectric Response of Al-Doped Cacu3ti4o12 Ceramics

Effect of grain boundary segregation on dielectric properties of CaCu3Ti4O12 ceramics

Enhanced electric breakdown field of CaCu3Ti4O 12 ceramics: Tuning of grain boundary by a secondary phase

Investigation Of Size Effect On The Giant Dielectric Cacu3ti4o12 Ceramic

Effect Of Grain Boundary On The Electromechanical Response Of Ferroelectric Polycrystals

Defect Structure of the High-Dielectric-Constant Perovskite Cacu3ti4o12

Real space imaging of the microscopic origins of the ultrahigh dielectric constant in polycrystalline CaCu3Ti4O12

Electrical Heterogeneity in CaCu3Ti4O12 Ceramics Fabricated by Sol–gel Method

Dielectric Properties of Grain–grainboundary Binary System

Effect of Oxygen Content on Giant Dielectric Constant and Dielectric Process in Cacu3ti4o12

Influence of Interface Point Defect on the Dielectric Properties of Y Doped CaCu3Ti4O12 Ceramics