Effects of Sintering Temperature on the Dielectric Properties of Batio3 Based X7r Ceramics

RZ Chen,XH Wang,LT Li,ZL Gui
DOI: https://doi.org/10.4028/www.scientific.net/kem.224-226.37
2002-01-01
Abstract:The X7R ceramic is based on BaTiO3-Nb2O5-CO2O3 system. Ceramics sintered at different temperatures in the range of 1200 similar to 1280degreesC were studied. Increasing sintering temperature (ST) will increase the room-temperature dielectric constant, epsilon(25)degrees(C), and change the temperature coefficient of capacitance, TCC. So it is important to control appropriate ST to achieve high epsilon(25)degrees(C) and good epsilon-T properties. The "core-shell" microstructure is investigated by transmission electron microscope (TEM) and energy disperse spectrum (EDS). Doping elements (Nb, Co) show gradient distributions in the "core-shell" structure. The relationship between the inhomogeneous microstructure and sintering temperature was discussed by the defect chemistry method. It is concluded that ST affects dielectric properties by the control of "core-shell" structure.
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