Doping Behaviors of Nb2O5 and Co2O3 in Temperature Stable BaTiO3-based Ceramics

W Li,JQ Qi,YL Wang,LT Li,ZL Gui

DOI: https://doi.org/10.1016/s0167-577x(02)00687-0

IF: 3

2002-01-01

Materials Letters

Abstract:The influence of Nb2O5 and Co2O3 on the dielectric constant–temperature characteristic of the Sm2O3, CeO2-doped BaTiO3 system was discussed. It can be concluded that Nb5+, Co3+ will be easier to replace the Ti4+ site by using the Nb2O5–Co2O3 composite oxide than by doping Nb2O5, Co2O3 separately. Increasing Co2O3 amount caused a lower dielectric constant and a higher variation rate. A properly sintering temperature can be helpful to flatten the dielectric constant–temperature curve. The BaTiO3-based ceramics doped with the Nb2O5–Co2O3 composition can be sintered at a temperature as low as 1230–1250 °C, and satisfy the X7R required with a high dielectric constant (ε25 °C>4000) and low dielectric loss (tan δ<2.0%).