Effects of W,Ti Co-Doping on the Microstructure and Microwave Dielectric Properties of Ba5nb4o15 Ceramics

Hao Zhuang,Zhenxing Yue,Fei Zhao,Jing Pei,Gang Yang,Longtu Li
DOI: https://doi.org/10.1143/jjap.47.4658
IF: 1.5
2008-01-01
Japanese Journal of Applied Physics
Abstract:W,Ti co-doped Ba5Nb4O15 microwave dielectric ceramics with compositions of Ba5Nb4-x(W1/2Ti1/2)xO15 (x =0–2) were prepared by solid-state reaction method. W6+ and Ti4+ substitution for Nb5+ can markedly lower the sintering temperature of Ba5Nb4O15 from 1450 to 1250 °C. X-ray powder diffraction (XRD) analysis reveals that BaWO4 formed as a secondary phase due to the limited solubility of WO3 in perovskite Ba5Nb4O15 when x>0.4. Scanning electron microscopy (SEM) observation suggests that a small amount of W and Ti co-doping can suppress the grain growth of Ba5Nb4O15 ceramics, indicating that the grain size decreases from ∼25 to ∼3 µm. The microwave dielectric properties of Ba5Nb4O15 ceramics is largely improved by W,Ti co-doping. With increasing x, the Q×f value increases from 25,200 GHz for undoped samples (x=0) to 38,600 GHz for x=0.4, and then declines to 19,500 GHz for x=1.2. In the composition range x=0–1.2, the dielectric constant increases slightly from 39.2 to 44, while the temperature coefficient decreases from ∼78 to ∼50 ppm/°C. The reasons for the improvement of the dielectric properties were investigated by SEM, XRD, and AC impedance spectrum analysis.
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