Abstract:The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 Å cycle-1 at 250 °C and 0.67 Å cycle-1 at 300 °C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 °C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 °C due to a strong Ta-Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of ∼2% in 200 mm wafer could be achieved with a step coverage of ∼90% in a deep hole structure (aspect ratio 5:1) which is promising for 3-dimensional architecture to form high density memories. Nonetheless, a rather high concentration (∼7 at. %) of carbon impurities was incorporated into the Ta2O5 film using TBDETCp, which was possibly due to readsorption of dissociated ligands as small organic molecules in the growth of Ta2O5 film by ALD. Despite the presence of high carbon concentration which might be an origin of large leakage current under electric fields, the Ta2O5 film using TBDETCp showed a promising resistive switching performance with an endurance cycle as high as ∼17 500 for resistance switching random access memory application. The optical refractive index of the deposited Ta2O5 films was 2.1-2.2 at 632.8 nm using both the Ta-precursors, and indirect optical band gap was estimated to be ∼4.1 eV for both the cases.

C-V and Dlts Studies of Al/Ta2o5/N-Si Structures with Ta2o5 Thin Films Deposited by Pulsed Laser Deposition

Pulsed laser deposition of tantalum oxide thin films

XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates

Processing and Characterization of Ta2O5 Films Deposited by Pulsed Laser Ablation

Deposition of Tantalum Oxide Films by Uv Laser Reactive Ablation in O-3 Ambient

Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

An Investigation of Oxides of Tantalum Produced by Pulsed Laser Ablation and Continuous Wave Laser Heating

Lithiation and electrochromic characteristics of composite Ta2O5-TiO2 films fabricated by ultraviolet reactive laser ablation

I-V Characteristics of High Dielectric Constant Tantalum Oxide Films

High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

Crystal Structure, Stability, and Metal-Insulator-Metal Transitions in Tantalum Oxides: Implication for Memristive Devices

I-V and C-V Properties of TiO 2 Thin Film by Pulsed-Laser Reactive Deposition

Growth and Structure of alpha-Ta films for Quantum Circuit Integration

Fabrication of tantalum silicate films with low TCR and low resistivity by magnetron sputtering

A study of the phase transformation of low temperature deposited tantalum thin films using high power impulse magnetron sputtering and pulsed DC magnetron sputtering

Deposition of Cu2Ta4O12 by pulsed laser deposition

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Pulsed Laser Deposited Ta2o5 Thin Films As an Electrochromic Material

Orthogonal Experimental Optimization of Preparation and Microstructural Properties of a Diffusion Barrier for Tantalum-Based Silicide Coatings

Study on microstructure, optical and tribological properties of self-formed Ta oxide films