Abstract:The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 Å cycle-1 at 250 °C and 0.67 Å cycle-1 at 300 °C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 °C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 °C due to a strong Ta-Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of ∼2% in 200 mm wafer could be achieved with a step coverage of ∼90% in a deep hole structure (aspect ratio 5:1) which is promising for 3-dimensional architecture to form high density memories. Nonetheless, a rather high concentration (∼7 at. %) of carbon impurities was incorporated into the Ta2O5 film using TBDETCp, which was possibly due to readsorption of dissociated ligands as small organic molecules in the growth of Ta2O5 film by ALD. Despite the presence of high carbon concentration which might be an origin of large leakage current under electric fields, the Ta2O5 film using TBDETCp showed a promising resistive switching performance with an endurance cycle as high as ∼17 500 for resistance switching random access memory application. The optical refractive index of the deposited Ta2O5 films was 2.1-2.2 at 632.8 nm using both the Ta-precursors, and indirect optical band gap was estimated to be ∼4.1 eV for both the cases.

Pulsed laser deposition of tantalum oxide thin films

Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

Characterization of High Quality Tantalum Pentoxide Film Synthesized by Oxygen Plasma Enhanced Pulsed Laser Deposition

C-V and Dlts Studies of Al/Ta2o5/N-Si Structures with Ta2o5 Thin Films Deposited by Pulsed Laser Deposition

Deposition of Tantalum Oxide Films by Uv Laser Reactive Ablation in O-3 Ambient

Processing and Characterization of Ta2O5 Films Deposited by Pulsed Laser Ablation

Deposition of Cu2Ta4O12 by pulsed laser deposition

Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

Study of the crystalline and optical properties of lithium tantalate thin films deposited by high power RF magnetron sputtering

An Investigation of Oxides of Tantalum Produced by Pulsed Laser Ablation and Continuous Wave Laser Heating

Pulsed Laser Deposited Ta2o5 Thin Films As an Electrochromic Material

Tuning of Electrical and Optical Properties of Tantalum Doped TiO2 Flims Prepared by Sol-gel Method

Optical Properties and Microstructure of Ta2o5 Thin Films Prepared by Oblique Angle Deposition

Study on Properties of TaOx Films Ion Conductor Doped with Zr

Intense Photoluminescence From Amorphous Tantalum Oxide Films

Advances in Ta2O5 Film Growth with Chemical Vapor Deposition

Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

Study on microstructure, optical and tribological properties of self-formed Ta oxide films

Fabrication of superconducting tantalum nitride thin films using infra-red pulsed laser deposition

Recent progress in preparation of Ta2O5 film by CVD using Ta(OC2H5)(5) as precursor