Abstract:CdO-Ga 2 O 3 alloy films (Cd 1-x Ga x O 1+δ ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10 -3 to 10 -1 ohm-cm while the mobility decreases gradually from 15 (x=0.34) to 10 cm 2 /Vs (x=0.6). The resistivity of amorphous Cd 1-x Ga x O 1+δ films can be further controlled from 10 -3 to 10 2 ohm-cm by oxygen doping. Moreover, alloy films grown on plastic (PEN) substrate exhibit similar electrical and optical properties. These results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films can potentially be used as highly conducting transparent conductors on flexible solar cells as well as gate electrodes with a wide bandgap tunabilty for transparent/flexible devices.

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