Near-infrared light emission from aluminum-doped tantalum-oxide thin films prepared using a simple co-sputtering method

Kenta Miura,Kosuke Omi
DOI: https://doi.org/10.1016/j.rinp.2024.107389
IF: 4.565
2024-01-27
Results in Physics
Abstract:We fabricated aluminum-doped tantalum-oxide (Ta 2 O 5 :Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 °C without rare-earth elements. The NIR light emission is thought to be due to the superposition of three emission peaks around wavelengths of 800, 870, and 950 nm, and X-ray diffraction analyses revealed that the origin of the NIR light emission is related to AlTaO 4 present in the Ta 2 O 5 :Al thin film.
physics, multidisciplinary,materials science
What problem does this paper attempt to address?