Abstract:The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 Å cycle-1 at 250 °C and 0.67 Å cycle-1 at 300 °C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 °C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 °C due to a strong Ta-Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of ∼2% in 200 mm wafer could be achieved with a step coverage of ∼90% in a deep hole structure (aspect ratio 5:1) which is promising for 3-dimensional architecture to form high density memories. Nonetheless, a rather high concentration (∼7 at. %) of carbon impurities was incorporated into the Ta2O5 film using TBDETCp, which was possibly due to readsorption of dissociated ligands as small organic molecules in the growth of Ta2O5 film by ALD. Despite the presence of high carbon concentration which might be an origin of large leakage current under electric fields, the Ta2O5 film using TBDETCp showed a promising resistive switching performance with an endurance cycle as high as ∼17 500 for resistance switching random access memory application. The optical refractive index of the deposited Ta2O5 films was 2.1-2.2 at 632.8 nm using both the Ta-precursors, and indirect optical band gap was estimated to be ∼4.1 eV for both the cases.

Deposition of Tantalum Oxide Films by Uv Laser Reactive Ablation in O-3 Ambient

Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

Pulsed laser deposition of tantalum oxide thin films

I-V and C-V Properties of TiO 2 Thin Film by Pulsed-Laser Reactive Deposition

C-V and Dlts Studies of Al/Ta2o5/N-Si Structures with Ta2o5 Thin Films Deposited by Pulsed Laser Deposition

XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates

Characteristics of Tantalum Oxynitride Films Prepared by Rf Magnetron Sputtering

Pulsed Laser Deposited Ta2o5 Thin Films As an Electrochromic Material

Lithiation and electrochromic characteristics of composite Ta2O5-TiO2 films fabricated by ultraviolet reactive laser ablation

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

I-V Characteristics of High Dielectric Constant Tantalum Oxide Films

I-V Characteristics of Tantalum Oxide Film and the Effect of Defects on Its Electrical Properties

Thermal Stability Of Laalo3/Si Deposited By Laser Molecular-Beam Epitaxy

Intense Photoluminescence From Amorphous Tantalum Oxide Films

Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

Processing and Characterization of Ta2O5 Films Deposited by Pulsed Laser Ablation

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Dielectric properties of Zr–Sn–Ti–O thin films prepared by pulsed laser deposition

Structural, Optical and Electrical Properties of High-K ZrO2 Dielectrics on Si Prepared by Plasma Assisted Pulsed Laser Deposition

Deposition of Cu2Ta4O12 by pulsed laser deposition