Abstract:We have developed a superlattice structure (SLS) of HfO2 and Al2O3 high- ${k}$ dielectrics by high-volume batch atomic layer deposition on a 200 mm platform. The SLS forms a hafnium aluminate (Hf1-xAlxO) alloy at deposition temperature and presents superior electrical properties as a metal-insulator-metal (MIM) capacitor. Among the samples, an Al mole fraction of ~0.31 demonstrates the highest capacitance density ( ${C} _{p} {D}$ ) of 12.46 fF/ $\mu \text{m}^{{2}}$ and dielectric constant, $\kappa >$ 22, 2% better than HfO2. A higher Al mole fraction of 0.56 shows a superior quadratic component ( $\alpha $ ) of voltage-coefficient of capacitance and 68% higher- $\kappa $ than an Al2O3 capacitor. Electrical measurement before and after annealing at 650 °C for 30 s illustrates the thermal stability of capacitors. The present research indicates a small amount of Al incorporation in HfO2 extends its quantization temperature by stabilizing the crystal phase by reducing oxygen vacancies and traps. It remarkably improved electrical characteristics under thermal stress compared to broken-down HfO2 capacitors under annealing. Besides, the alloy also shows improved linearity over a broad frequency range, lower leakage current, and a breakdown electric field ( ${E} _{\text {BV}}$ ) in the order of 4 MV/cm. At the same time, higher Al incorporation provides the highest ${E} _{\text {BV}}$ of ~8 MV/cm, low leakage, and near principle $\alpha $ of 210 ppm/ $\text{V}^{{2}}$ with better thermal stability. These thin multilayer SLS alloys show excellent relative capacitance variation over the voltage with high ${C} _{p} {D}$ , $\kappa $ , low leakage of 10 nA/cm2 at 3 MV/cm, suitable for higher thermal budget and interposer process integration for various high bandwidth RF and low-cost memory applications with smaller chip area.

Reactive magnetron sputtered aluminum titanate high-к dielectric films for MIM devices

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition

Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3Stacks for High-Performance MIM Capacitors

High-Performance HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform

High-performance MIM Capacitor Using ALD High-K HfO2-Al2O3 Laminate Dielectrics

Mist chemical vapor deposition of Al1−xTixOy thin films and their application to a high dielectric material

CaCu33Ti44O1212 Films Prepared by Magnetron S Puttering

Characterization of High Κ Al2O3 Based Metal-Insulator-metal Antifuse

Fabrication and Electrical Properties of Flexible Polymer-based MIM Capacitors of High-k Nanolaminate Dielectrics of HfO2-SnO2-TiO2 with ultrathin Al2O3 insertion layer by Plasma-Enhanced Atomic Layer Deposition

High Density Al2O3/TaN-based Metal–insulator–metal Capacitors in Application to Radio Frequency Integrated Circuits

Improvement of Voltage Linearity and Leakage Current of MIM Capacitors with Atomic Layer Deposited Ti-Doped ZrO2 Insulators

High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates

Preparation and Properties of TiO2/Al2O3 Stacked High k Gate Dielectric Films

High-Performance MIM Capacitors for a Secondary Power Supply Application

Atomic-layer-deposited Al2O3-HfO2 Laminated and Sandwiched Dielectrics for Metal–insulator–metal Capacitors

A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics

I-V Characteristics of High Dielectric Constant Tantalum Oxide Films