High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates

chongyuan zhuang,lei wang,zhun dai,deren yang
DOI: https://doi.org/10.1149/2.0021505ssl
2015-01-01
ECS Solid State Letters
Abstract:The Ni-NiO-Ag Metal-Insulator-Metal (MIM) diodes were fabricated via electrochemical deposition, whose contact area was restricted to be 3.1 x 10(-4) mu m(2) by the nanochannels of anodic aluminum oxide templates. The NiO insulating layer featuring an average thickness of 6 nm was grown by thermal oxidation, as revealed by transmission electron microscopy (TEM). The MIM diodes show a highly asymmetric and nonlinear I-V characteristic, with a maximum responsivity of 8.5 V-1 and a zero-bias responsivity of 5.8 V-1, suggesting its great potential for high frequency application. (C) 2015 The Electrochemical Society. All rights reserved.
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