Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

High Rectification Ratio Metal-Insulator-semiconductor Tunnel Diode Based on Single-Layer MoS2

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS 2 diode

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Epitaxial Growth of Metal-Semiconductor Van Der Waals Heterostructures NbS2/MoS2 with Enhanced Performance of Transistors and Photodetectors

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel

High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Integrated Circuits Based on Bilayer MoS2 Transistors

Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Vertical SnS 2 /si Heterostructure for Tunnel Diodes

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Realization of Ultra-Scaled MoS 2 Vertical Diodes via Double-Side Electrodes Lamination

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Reconfigurable Tunneling Transistors Heterostructured by an Individual Carbon Nanotube and MoS2