Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 Nm.

Junction-Less Monolayer MoS2 FETs

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

MoS2/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio Via Thickness Engineering for Logic Inverters

Promising Properties of a Sub-5-nm Monolayer MoSi<sub>2</sub>N<sub>4</sub> Transistor

Improved performance in MoS2 homogeneous junction field effect transistors by optimizing electrodes contact

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

Damage-free Mica/mos2 Interface for High-Performance Multilayer MoS2 Field-Effect Transistors

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Quantum-mechanical effect in atomically thin MoS2 FET

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate