Fabrication Of Ni-Nio-Cu Metal-Insulator-Metal Tunnel Diodes Via Anodic Aluminum Oxide Templates

Shijun Zhang,Lei Wang,Chen Xu,Dan Li,Leifeng Chen,Deren Yang
DOI: https://doi.org/10.1149/2.001301ssl
2013-01-01
ECS Solid State Letters
Abstract:The Ni-NiO-Cu Metal-Insulator-Metal (MIM) tunnel diodes were fabricated through electrochemical deposition and thermal oxidation in the confined nanochannels of anodic aluminum oxide templates. Scanning electron microscopy (SEM) investigation reveals the diodes have a contact area of about 0.008 mu m(2), and transmission electron microscopy (TEM) shows that the thickness of NiO insulator layers ranges from 2 nm to 12 nm. The current-voltage (I-V) characteristics of the MIM diodes as prepared exhibit the nonlineara behavior with values strongly depending on the thermal oxidation time and the best zero bias sensitivity is 7.3 V-1 at bias voltage (V-bias) of 0.1 V. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.001301ssl] All rights reserved.
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