Abstract:Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for superconductor-insulator-superconductor (SIS) junction material is the Gurvitch trilayer process based on magnetron sputtering of Nb electrodes with Al-Oxide or AlN tunnel barriers grown on an Al overlayer. However, a current limitation of elemental Nb-based circuits is the low-loss operation of THz circuits operating above the 670 GHz gap frequency of Nb and operation at higher temperatures for projects with a strict power budget, such as space-based applications. NbTiN is an alternative higher energy gap material and we have previously reported on the first NbTiN/AlN/NbTiN superconducting-insulating-superconducting (SIS) junctions with an epitaxially grown AlN tunnel barrier. One drawback of a directly grown tunnel barrier compared to thermal oxidation or plasma nitridation is control of the barrier thickness and uniformity across a substrate, leading to variations in current density (Jc). Semiconductor barriers with smaller barrier heights enable thicker tunnel barriers for a given Jc. GaN is an alternative semiconductor material with a closed-packed Wurtzite crystal structure similar to AlN and it can be epitaxially grown as a tunnel barrier using the Reactive Bias Target Ion Beam Deposition (RBTIBD) technique. This work presents the preliminary results of the first reported high-quality NbTiN/GaN/NbTiN heterojunctions with underdamped SIS I(V) characteristics.

Single electron transistors with high quality superconducting niobium islands

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

A metal/oxide tunneling transistor

Fabrication of High-Quality Niobium Superconducting Tunnel Junctions

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

A thermostable trilayer resist for niobium lift-off

Niobium-based superconducting nano-devices fabrication using all-metal suspended masks

Charging effects in niobium nanostructures

SuperGaN: Synthesis of NbTiN/GaN/NbTiN Tunnel Junctions

Dynamic Versus Static Oxidation of Nb/Al-AlO$_x$/Nb Trilayer

Coulomb blockade effects in anodised niobium nanostructures

Aluminum Hard Mask Technique for the Fabrication of High-Quality Submicron Nb/Al-AlOx/Nb Josephson Junctions

Anodization-free fabrication process for high-quality cross-type Josephson tunnel junctions based on a Nb/Al-AlO$_x$/Nb trilayer

Fabrication of high quality Al/AlO_x/Al Josephson junctions

Improved coherence in optically defined niobium trilayer-junction qubits

Investigation of oxidation for high quality Nb/AlOx-Al/Nb Josephson tunnel junctions

Experimental Demonstration of Single Electron Transistors Featuring SiO2 PEALD in Ni-SiO2-Ni Tunnel Junctions

Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation

High-energy electron injection in top-gated niobium microbridges for enhanced power efficiency and localized control

Hybrid single-electron turnstiles with thick superconducting electrodes for improved quasiparticle relaxation