Axial computed tomography evaluation of the internal nasal valve correlates with clinical valve narrowing and patient complaint

Jason A. Moche,Justin C Cohen,S. Pearlman

DOI: https://doi.org/10.1002/alr.21128

2013-07-01

Abstract:The objective of this work was to explore the utility of axial computed tomography (CT) imaging to objectively define a narrow internal nasal valve, and compare those findings with clinical examination and patient complaint.

What problem does this paper attempt to address?

Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films

V. Bouchiat,M. Faucher,C. Thirion,W. Wernsdorfer,T. Fournier,B. Pannetier

DOI: https://doi.org/10.48550/arXiv.cond-mat/0107273

2001-07-12

Mesoscale and Nanoscale Physics

Abstract:We present a method for fabricating Josephson junctions and superconducting quantum interference devices (SQUIDs) which is based on the local anodization of niobium strip lines 3 to 6.5 nm-thick under the voltage-biased tip of an Atomic Force Microscope. Microbridge junctions and SQUID loops are obtained either by partial or total oxidation of the niobium layer. Two types of weak link geometries are fabricated : lateral constriction (Dayem bridges) and variable thickness bridges. SQUIDs based on both geometries show a modulation of the maximum Josephson current with a magnetic flux periodic with respect to the superconducting flux quantum h/2e. They persist up to 4K. The modulation shape and depth for SQUIDs based on variable thickness bridges indicate that the weak link size becomes comparable to the superconducting film coherence length which is of the order of 10nm.
Progress toward superconductor electronics fabrication process with planarized NbN and NbN/Nb layers

Sergey K. Tolpygo,Justin L. Mallek,Vladimir Bolkhovsky,Ravi Rastogi,Evan B. Golden,Terence J. Weir,Leonard M. Johnson,Mark A. Gouker

DOI: https://doi.org/10.1109/TASC.2023.3246430

2023-02-14

Abstract:To increase density of superconductor digital and neuromorphic circuits by 10x and reach integration scale of $10^8$ Josephson junctions (JJs) per chip, we developed a new fabrication process on 200-mm wafers, using self-shunted Nb/Al-AlOx/Nb JJs and kinetic inductors. The process has a layer of JJs, a layer of resistors, and 10 fully planarized superconducting layers: 8 Nb layers and 2 layers of high kinetic inductance materials, Mo$_2$N and NbN, with sheet inductance of 8 pH/sq and 3 pH/sq, respectively. NbN films were deposited by two methods: with $T_c$=15.5 K by reactive sputtering of a Nb target in Ar+N$_2$ mixture; with $T_c$ in the range from 9 K to 13 K by plasma-enhanced chemical vapor deposition (PECVD) using Tris(diethylamido)(tert-butylimido)niobium(V) metalorganic precursor. PECVD of NbN was investigated to obtain conformal deposition and filling narrow trenches and vias with high depth-to-width ratios, which was not possible to achieve using sputtering and other physical vapor deposition (PVD) methods at temperatures below $200 ^oC$ required to prevent degradation of Nb/Al-AlOx/Nb junctions. Nb layers with 200 nm thickness are used in the process layer stack as ground planes to maintain a high level of interlayer shielding and low intralayer mutual coupling, for passive transmission lines with wave impedances matching impedances of JJs, typically <=50 $\Omega$, and for low-value inductors. NbN and NbN/Nb bilayer are used for cell inductors. Using NbN/Nb bilayers and individual pattering of both layers to form inductors allowed us to minimize parasitic kinetic inductance associated with interlayer vias and connections to JJs as well as to increase critical currents of the vias. Fabrication details and results of electrical characterization of NbN films, wires, and vias, and comparison with Nb properties are given.

Superconductivity,Materials Science,Applied Physics
Anodization-free fabrication process for high-quality cross-type Josephson tunnel junctions based on a Nb/Al-AlO$_x$/Nb trilayer

Fabienne Adam,Christian Enss,Sebastian Kempf

DOI: https://doi.org/10.1088/1361-6668/ad59cf

2024-10-23

Abstract:Josephson tunnel junctions form the basis for various superconducting electronic devices. For this reason, enormous efforts are routinely taken to establish and later on maintain a scalable and reproducible wafer-scale manufacturing process for high-quality Josephson junctions. Here, we present an anodization-free fabrication process for Nb/Al-AlO$_x$/Nb cross-type Josephson junctions that requires only a small number of process steps and that is intrinsically compatible with wafer-scale fabrication. We show that the fabricated junctions are of very high-quality and, compared to other junction types, exhibit not only a significantly reduced capacitance but also an almost rectangular critical current density profile. Our process hence enables the usage of low capacitance Josephson junctions for superconducting electronic devices such as ultra-low noise dc-SQUIDs, microwave SQUID multiplexers based on non-hysteretic rf-SQUIDs and RFSQ circuits.

Superconductivity,Instrumentation and Detectors
Optimization of Nb/Al-AlOx/Nb Josephson Junctions Through Wafer-Scale Anodic Oxidation: a Systematic Characterization and Performance Analysis

Jian Chen,Zhenyu Wang,Da Xu,Huan Qiao,Jinjin Li,Qing Zhong,Shijian Wang,Jiusun Zeng,Jinhui Cai,Mingyu Zhang,Yeru Wang,Xu Li,Yuan Zhong,Wenhui Cao,Xueshen Wang

DOI: https://doi.org/10.1088/1361-6668/acf0f0

2023-01-01

Abstract:The Nb/Al-AlOx/Nb (SIS) Josephson junction is a crucial component in many types of superconducting devices. However, it can be easily damaged during the plasma fabrication processes. Anodic oxidation is an effective method for protecting SIS junctions by oxidizing Nb and Al from the junction profile. We used a custom wafer-scale anodic oxidation system and a neutral electrolyte to study the oxidation process of Nb films and Nb-Al(-AlOx)-Nb junctions. The oxidation process was thoroughly characterized by considering factors such as morphology and electrical properties. Anodization spectroscopy revealed varying oxidation sections from the top Nb layer to the bottom layer, extending across the Al-AlOx interlayer. This indicates that a 4 nm Al layer is sufficient to cover the surface of the bottom Nb film. High-resolution transmission electron microscopy and energy dispersive spectroscopy revealed that the Nb2O5 layer produced from the oxidation of the bottom Nb layer penetrated the Al2O3 layer and migrated to the top surface as the oxidation voltage increased. The top Nb layer of the SIS junction was also subjected to oxidation, despite the presence of a protective photoresist. Following the anodic oxidation process, the entire wafer surface was coated with an insulating Nb2O5 film. This film provided protection for the SIS junctions during the subsequent microfabrication process. The fabricated junction array, consisting of 128 junctions, demonstrated uniform electrical properties benefiting from the anodic oxidation process. This systematic analysis will further the research and practical applications of SIS junctions.
Highly tunable NbTiN Josephson junctions fabricated with focused helium ion beam

Aki Ruhtinas,Ilari J. Maasilta

2024-09-01

Abstract:We demonstrate a direct writing method for the fabrication of planar Josephson junctions from high quality superconducting niobium titanium nitride (NbTiN) thin films, by creating local disorder using focused He-ion beam irradiation in a helium ion microscope. We show that we can control the suppression of superconductivity in NbTiN as a function of the helium ion beam fluence, enabling us to successfully fabricate Josephson junctions with highly tunable weak links ranging from metallic to insulating phase, due to the continuous nature of the disorder-induced superconductor-insulator transition. We demonstrate the successful fabrication of both SNS and SIS type of devices, and show that we can achieve exceptionally wide range ($\sim$5 orders of magnitude) of critical current densities and junction resistances. The SNS type junctions follow closely the ideal resistively and capacitively shunted junction behavior, have high characteristic voltages up to $\sim$ 1.5\,mV and show Shapiro steps up to very high orders, while the SIS junctions also follow established theories well. The results suggest that junctions fabricated with this method from NbTiN are suitable for a wide range of applications in superconducting electronics because of the excellent mechanical, electrical and microwave properties of NbTiN. In particular, as NbTiN has previously been used to fabricate high quality factor microwave resonators, we see the method as a promising and simple way to realize superconducting qubits and other quantum devices using only a single superconducting film.

Superconductivity,Mesoscale and Nanoscale Physics
Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation

Kenji Gamo,Atsuhiro Kajiya,Susumu Namba

DOI: https://doi.org/10.7567/jjaps.18s1.201

IF: 1.5

1979-01-01

Japanese Journal of Applied Physics

Abstract:Niobium weak links have been fabricated by means of electron beam lithography and nitrogen ion implantation, and current-voltage characteristics, the temperature and the applied magnetic field dependence of a maximum zero-voltage current and dose dependence of major junction parameters have been measured. At a low temperature below a critical temperature, self heating effect was significant and large hysterisis in current-voltage characteristics appeared and no Josephson effect was observed. At a temperature above the critical temperature, a maximum zero-voltage current shows periodic dependence on an applied magnetic field similar to the Fraunhofer pattern. A normal junction resistance increased and Tc decreased with increasing a dose, which are thought to be due to radiation damage. It was found that the present techniques provide useful means to fabricate Josephson junctions with desired characteristics.

physics, applied
The research of the fabrication of NbN/AlN/NbN superconductor tunnel junctions

Liu Xi,Kang Lin,Sun Jing,Zhao Shaoqi,Wu Peiheng

DOI: https://doi.org/10.3969/j.issn.1001-7100.2007.01.014

2007-01-01

Abstract:We present our process for fabricating NbN/AlN/NbN tunnel junctions on MgO substrates,in which NbN layers and AlN layers were prepared by DC and RF magnetron sputtering.In order to fabricate tunnel junctions with high qualities,all the three layers should be prepared once in our high vacuum chamber.Then we got the pattern of the junctions in the method of photolithography and reactive ion etching,followed with the insulated layer(AlN) and the upper probe layer(NbN).The current-voltage(I-V) characteristics of junctions were measured with four terminal probes in low temperature,and together with the other characteristics in high frequency,especially in the terahertz band.
Aluminum Hard Mask Technique for the Fabrication of High-Quality Submicron Nb/Al-AlOx/Nb Josephson Junctions

Christoph Kaiser,J. M. Meckbach,K. Ilin,J. Lisenfeld,R. Schäfer,A. V. Ustinov,M. Siegel

DOI: https://doi.org/10.1088/0953-2048/24/3/035005

2010-11-04

Abstract:We have developed a combined photolithography and electron-beam lithography fabrication process for sub-\mum to \mum-size Nb/Al-AlOx/Nb Josephson junctions. In order to define the junction size and protect its top electrode during anodic oxidation, we developed and used the new concept of an aluminum hard mask. Josephson junctions of sizes down to 0.5 \mum2 have been fabricated and thoroughly characterized. We found that they have a very high quality, which is witnessed by the IV curves with quality parameters Vm > 50 mV and Vgap = 2.8 mV at 4.2 K, as well as IcRN products of 1.75-1.93 mV obtained at lower temperatures. In order to test the usability of our fabrication process for superconducting quantum bits, we have also designed, fabricated and experimentally investigated phase qubits made of these junctions. We found a relaxation time of T1 = 26 ns and a dephasing time of T2 = 21 ns.

Superconductivity
Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Bikash Gajar,Sachin Yadav,Deepika Sawle,Kamlesh K. Maurya,Anurag Gupta,R. P. Aloysius,Sangeeta Sahoo,R.P. Aloysius

DOI: https://doi.org/10.48550/arXiv.1906.08692

2019-06-20

Superconductivity

Abstract:Here we report a novel nitridation technique for transforming niobium into hexagonal Nb2N which appears to be superconducting below 1K. The nitridation is achieved by high temperature annealing of Nb films grown on Si3N4/Si (100) substrate under high vacuum. The structural characterization directs the formation of a majority Nb2N phase while the morphology shows granular nature of the films. The temperature dependent resistance measurements reveal a wide metal-to-superconductor transition featuring two distinct transition regions. The region close to the normal state varies strongly with the film thickness, whereas, the second region in the vicinity of the superconducting state remains almost unaltered but exhibiting resistive tailing. The current-voltage characteristics also display wide transition embedded with intermediate resistive states originated by phase slip lines. The transition width in current and the number of resistive steps depend on film thickness and they both increase with decrease in thickness. The broadening in transition width is explained by progressive establishment of superconductivity through proximity coupled superconducting nano-grains while finite size effects and quantum fluctuation may lead to the resistive tailing. Finally, by comparing with Nb control samples, we emphasize that Nb2N offers unconventional superconductivity with promises in the field of phase slip based device applications.
Investigation of oxidation for high quality Nb/AlOx-Al/Nb Josephson tunnel junctions

Lu Yapeng,Cao Chunhai,Li Mengyue,Xu Qinyin,Xiao Wei,Fang Yurong,Xu Weiwei,Kang Lin,Chen Jian,Wu Peiheng

DOI: https://doi.org/10.3969/j.issn.1001-7100.2012.07.008

2012-01-01

Abstract:A new method of oxidization for fabricating Nb Josephson junction with low leakage current was reported,which could improve the oxidation around the tunnel barrier effectively: the Al film conducted by plasma oxidation of oxygen ions with the help of RIE could improve the oxide quality of the film,and enforce the insulation property.The AES analysis shows that the oxide layer is uniform,the interface is clear.High quality junctions were fabricated.
Fabrication and Properties of Nb/Al-AlO X/nb Josephson Junctions for SQUID Application

Da Xu,Jinjin Li,Wenhui Cad,Jianshe Liu,Wei Chen

DOI: https://doi.org/10.1109/cpem49742.2020.9191689

2020-01-01

Abstract:Nb/Al-AlOx/Nb Josephson junctions (JJs) were fabricated using standard photolithography technology at NIM for superconducting quantum interference device (SQUID). The current-voltage (I-V) characteristics of shunted Nb/Al-AlOx/ Nb JJs and JJ array were investigated. The critical current density (Jc) is controlled by exposure time and oxygen pressure during the oxidation process of Al film. It is indicated that the shunted JJs are overdamped and the unshunted JJs are high quality from the I-V curve of JJ array, which are suitable for SQUID application.
Coulomb blockade effects in anodised niobium nanostructures

Torsten Henning

DOI: https://doi.org/10.48550/arXiv.cond-mat/9710037

1997-10-03

Mesoscale and Nanoscale Physics

Abstract:Niobium thin film nanostructures were fabricated using electron beam lithography and a liftoff process involving a four layer resist system. Wires having micrometres in length and below 200 nm in width were deposited on an insulating substrate and subsequently thinned by anodisation. The resistance of the wires was monitored in situ and could be trimmed by controlling the anodisation voltage and time. The method appears appropriate for the fabrication of very small resistors for use as biasing resistors for single electron devices. Transport properties of these resistors were measured at millikelvin temperatures. They had nonlinear current-voltage characteristics around zero bias and showed a transistion from superconducting to insulating behaviour. Analysis of the offset voltage showed that a Coulomb blockade set in when the sheet resistance of the films exceeded the superconducting quantum resistance approx 6.45 kOhm. Samples in a single electron transistor-like geometry with two variable thickness weak links were made by combined angular evaporation of niobium and anodisation. Overlapping gate electrodes were deposited on these samples. The drain-source current-voltage characteristics could be modulated by the gate voltage, giving a response typical for a system of multiple ultrasmall tunnel junctions. The thesis contains a five page appendix with lithography recipes.
Josephson Junctions Via Anodization of Epitaxial Al on an InAs Heterostructure

A. Jouan,J. D. S. Witt,G. C. Gardner,C. Thomas,T. Lindemann,S. Gronin,M. J. Manfra,D. J. Reilly

DOI: https://doi.org/10.1063/5.0060757

2021-05-24

Abstract:We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique to define Josephson junctions in proximity induced superconducting Al-InAs heterostructures, we observe multiple Andreev reflections in transport experiments, indicative of a high quality junction. We further compare the mobility and density of Hall-bars defined via wet etching and anodization. These results may find utility in uncovering new fabrication approaches to junction-based qubit platforms.

Superconductivity,Mesoscale and Nanoscale Physics,Materials Science
Dynamic Versus Static Oxidation of Nb/Al-AlO$_x$/Nb Trilayer

Tannaz Farrahi,Alan W. Kleinsasser,Michael Cyberey,Jie Wang,Micahel B. Eller,Jian Z. Zhang,Anthony R. Kerr,Joseph G. Lambert,Robert M. Weikle,Arthur W. Lichtenberger

2023-06-22

Abstract:High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical current density (J$_c$) junctions exhibit defects that result in significant subgap leakage current that is detrimental for many applications. High quality, high-J$_c$ junctions can be realized with AlN$_x$ barriers, but control of J$_c$ is more difficult than with AlO$_x$. It is therefore of interest to study the growth of thin AlO$_x$ barriers with the ultimate goal of achieving high quality, high-J$_c$ AlO$_x$ junctions. In this work, 100\%\ O$_2$ and 2\%\ O$_2$ in Ar gas mixtures are used both statically and dynamically to grow AlO$_x$ tunnel barriers over a large range of oxygen exposures. In situ ellipsometry is used for the first time to extensively measure AlO$_x$ tunnel barrier growth in real time, revealing a number of unexpected patterns. Finally, a set of test junction wafers was fabricated that exhibited the well-known dependence of J$_c$ on oxygen exposure (E) in order to further validate the experimental setup.

Superconductivity
Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an atomic force microscope

M. Faucher,T. Fournier,B. Pannetier,C. Thirion,W. Wernsdorfer,J.C. Villegier,V. Bouchiat

DOI: https://doi.org/10.1016/s0921-4534(01)01168-6

2002-03-01

Abstract:We present a fabrication method of superconducting quantum interference devices (SQUIDs) based on direct write lithography with an atomic force microscope (AFM). This technique involves maskless local anodization of Nb or NbN ultrathin films using the voltage biased tip of the AFM. The SQUIDs are of weak-link type, for which two geometries have been tested: Dayem and variable thickness nanobridges. The magnetic field dependence of the maximum supercurrent Ic(Φ) in resulting SQUIDs is thoroughly measured for different weak link geometries and for both tested materials. It is found that the modulation shape and depth of Ic(Φ) curves are greatly dependent on the weak link size. We analyze the results taking into account the kinetic inductance of nanobridges and using the Likharev–Yakobson model. Finally we show that the present resolution reached by this technique (20 nm) enables us to fabricate Nb weak-links which behavior approaches those of ideal Josephson junctions.
Self-aligning fabrication and DC characterization of Nb/AlOx/Nb superconducting Josephson junctions

Na Zhao,Jianshe Liu,Tiefu Li,Wei Wu,Hu Zhao,Wei Chen

2012-01-01

Abstract:Superconducting qubit systems are one way to implement large-scale quantum computations. Nb/AlOx/Nb superconducting Josephson junctions were fabricated using a planar process as the groundwork for fabricating reliable qubits. The junction area was formed by a self-aligning technology, which effectively protected the device and reduced the fabrication complexity. A low temperature system was constructed to characterize the Josephson junctions with automatic generation and acquisition of signals. The I-V characteristics of the Josephson junctions were measured at different temperatures with an observed jump at the niobium superconducting gap voltage of 2.85 mV. The critical currents of the Josephson junctions were measured at different temperatures, which agree well with the theoretical result of Ambegaokar and Baratoff.
Fabrication And Characterization Of Nbn/Aln/Nbn Junction On Mgo(001) And Aln/Nbn Bilayer On Mgo(111) Substrates

Peiheng Wu,LingYan Kong,Y. Chen,Jiabao Sun,Jian Chen,Shao Q. Zhao

DOI: https://doi.org/10.1109/TASC.2005.849756

IF: 1.9489

2005-01-01

IEEE Transactions on Applied Superconductivity

Abstract:Using direct current (DC) or radio frequency (RF) magnetron sputtering techniques, NbN/AlN/NbN junctions or AlN/NbN bilayers are prepared on single crystal MgO (001) or MgO (111) substrates respectively, both at ambient substrate temperatures. The crystalline structures of such multilayers are characterized layer-by-layer using X-ray diffraction and transmission electron microscopy (TEM). Interestingly, the AlN barrier in NbN/AlN/NbN/ MgO (001) is amorphous while the NbN/AlN/NbN/MgO (111) is single-crystalline with (001) orientation. The electrical properties of these two structures are compared. Also discussed are the DC and high frequency behavior of NbN/AlN/NbN/ MgO (001) junction.
Intrinsically shunted NbN/TaN/NbN Josephson junctions on Si substrates for large-scale integrated circuits applications

Kaixin Yan,Lu Zhang,Yulong Zhong,Jiasheng Shi,Weifeng Shi,Ling Wu,Huiwu Wang,Lei Chen,Jie Ren,Wei Peng,Zhen Wang

DOI: https://doi.org/10.1088/1361-6668/ac591d

2022-04-25

Superconductor Science and Technology

Abstract:Abstract Superconducting circuits based on Josephson junctions have the potential to achieve high speed and ultra-low power consumption, but their integration is limited by the low controllability of Nb-based tunnel junction and the existence of shunt resistors. In this work, we report the fabrication of superconductor/normal metal/superconductor (SNS) Josephson junctions with high reproducibility on oxidized Si substrates. The junctions based on NbN/TaN/NbN trilayers measured at 4.2 K show excellent Josephson properties with a wide range of critical current ( I c ) from 227 to 2000 μ A. The variations of critical current density ( J c ) and characteristic voltage ( V c ) are respectively less than 7.1% and 7.5% in the 2 inch region. The standard deviation of I c is calculated to be less than 1.7% for Josephson arrays with the number of junctions up to 10 000 occupying an area of 0.34 mm 2 . The results provide a guarantee for the applications of NbN-SNS Josephson junctions in superconducting large-scale integrated circuits.

physics, condensed matter, applied
Improved coherence in optically defined niobium trilayer-junction qubits

Alexander Anferov,Kan-Heng Lee,Fang Zhao,Jonathan Simon,David I. Schuster

DOI: https://doi.org/10.1103/physrevapplied.21.024047

IF: 4.6

2024-02-24

Physical Review Applied

Abstract:Niobium offers the benefit of increased operating temperatures and frequencies for Josephson junctions, which are the core component of superconducting devices. However, existing niobium processes are limited by more complicated fabrication methods and higher losses than now-standard aluminum junctions. Combining recent trilayer fabrication advancements, methods to remove lossy dielectrics and modern superconducting qubit design, we revisit niobium trilayer junctions and fabricate all-niobium transmons using only optical lithography. We characterize devices in the microwave domain, measuring coherence times up to 62μs and an average qubit quality factor above 105 : much closer to state-of-the-art aluminum-junction devices. We find the higher superconducting gap energy also results in reduced quasiparticle sensitivity above 0.16 K, where aluminum-junction performance deteriorates. Our low-loss junction process is readily applied to standard optical-based foundry processes, opening alternative avenues for direct integration and scalability, and paves the way for higher-temperature and higher-frequency quantum devices. https://doi.org/10.1103/PhysRevApplied.21.024047 © 2024 American Physical Society

physics, applied

Axial computed tomography evaluation of the internal nasal valve correlates with clinical valve narrowing and patient complaint

Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films

Progress toward superconductor electronics fabrication process with planarized NbN and NbN/Nb layers

Anodization-free fabrication process for high-quality cross-type Josephson tunnel junctions based on a Nb/Al-AlO$_x$/Nb trilayer

Optimization of Nb/Al-AlOx/Nb Josephson Junctions Through Wafer-Scale Anodic Oxidation: a Systematic Characterization and Performance Analysis

Highly tunable NbTiN Josephson junctions fabricated with focused helium ion beam

Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation

The research of the fabrication of NbN/AlN/NbN superconductor tunnel junctions

Aluminum Hard Mask Technique for the Fabrication of High-Quality Submicron Nb/Al-AlOx/Nb Josephson Junctions

Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Investigation of oxidation for high quality Nb/AlOx-Al/Nb Josephson tunnel junctions

Fabrication and Properties of Nb/Al-AlO X/nb Josephson Junctions for SQUID Application

Coulomb blockade effects in anodised niobium nanostructures

Josephson Junctions Via Anodization of Epitaxial Al on an InAs Heterostructure

Dynamic Versus Static Oxidation of Nb/Al-AlO$_x$/Nb Trilayer

Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an atomic force microscope

Self-aligning fabrication and DC characterization of Nb/AlOx/Nb superconducting Josephson junctions

Fabrication And Characterization Of Nbn/Aln/Nbn Junction On Mgo(001) And Aln/Nbn Bilayer On Mgo(111) Substrates

Intrinsically shunted NbN/TaN/NbN Josephson junctions on Si substrates for large-scale integrated circuits applications

Improved coherence in optically defined niobium trilayer-junction qubits