The research of the fabrication of NbN/AlN/NbN superconductor tunnel junctions

Liu Xi,Kang Lin,Sun Jing,Zhao Shaoqi,Wu Peiheng
DOI: https://doi.org/10.3969/j.issn.1001-7100.2007.01.014
2007-01-01
Abstract:We present our process for fabricating NbN/AlN/NbN tunnel junctions on MgO substrates,in which NbN layers and AlN layers were prepared by DC and RF magnetron sputtering.In order to fabricate tunnel junctions with high qualities,all the three layers should be prepared once in our high vacuum chamber.Then we got the pattern of the junctions in the method of photolithography and reactive ion etching,followed with the insulated layer(AlN) and the upper probe layer(NbN).The current-voltage(I-V) characteristics of junctions were measured with four terminal probes in low temperature,and together with the other characteristics in high frequency,especially in the terahertz band.
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