Abstract:In a search for a simple proximity system of a topological insulator and a superconductor for studying the role of surface versus bulk effects by gating, we report here on a first step toward this goal, namely the choice of such a system and its characterization. We chose to work with thin film bilayers of grainy 5 nm thick NbN films as the superconductor, overlayed with 20 nm thick topological layer of $\rm Bi_2Se_3$ and compare the transport results to those obtained on a 5 nm thick reference NbN film on the same wafer. Bilayers with ex-situ and in-situ prepared $\rm NbN-Bi_2Se_3$ interfaces were studied and two kinds of proximity effects were found. At high temperatures just below the superconducting transition, all bilayers showed a conventional proximity effect where the topological $\rm Bi_2Se_3$ suppresses the onset or mid-transition $T_c$ of the superconducting NbN films by about 1 K. At low temperatures, a cross-over of the resistance versus temperature curves of the bilayer and reference NbN film occurs, where the bilayers show enhancement of $T_c(R=0)$, $I_c$ (the supercurrent) and the Andreev conductance, as compared to the bare NbN films. This indicates that superconductivity is induced in the $\rm Bi_2Se_3$ layer at the interface region in between the NbN grains. Thus an inverse proximity effect in the topological material is demonstrated.

Tunneling studies of NbAl superconducting proximity-effect bilayers

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

Fabrication on Nb/A1-AlO_X/Nb tunnel junction

The research of the fabrication of NbN/AlN/NbN superconductor tunnel junctions

The research of the fabrication of Al/Al_2O_3/Al superconductor tunnel junctions by electron beam vapour

The Reaction Process of NbAl Interface in Rod-in-Tube Strands

Two-Dimensional Superconductivity at the LaAlO_{3}/KTaO_{3}(110) Heterointerface.

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Comparative study on the strain-dependent mechanical and electronic properties of Nb<sub>3</sub>Al and Nb<sub>3</sub>Sn

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

The oxidation state at tunnel junction interfaces

THE RESEARCH OF THE FABRICATION OF Al/Al2O3/Al TUNNEL JUNCTION

Microstructure Investigation of Fe/Al2o3/Fe Tunneling Junction

Investigation of the ordering and atomic site occupancies of Nb-doped TiAl/Ti3Al intermetallics

Proximity effects at the interface of a superconductor and a topological insulator in NbN - Bi_2Se_3 thin film bilayers

Dynamic Versus Static Oxidation of Nb/Al-AlO$_x$/Nb Trilayer

Coexistence of many-body effects at the LaAlO 3 /SrTiO 3 interface

Modeling Tunneling for the Unconventional Superconducting Proximity Effect

Tunneling Spectroscopy of Atomically-Thin Al2O3 Films for Tunnel Junctions

Character and Fabrication of Al/Al2O3/Al Tunnel Junctions for Qubit Application.