Abstract:Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al2O2/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ~1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al2O3 tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Tunneling Spectroscopy of Atomically-Thin Al2O3 Films for Tunnel Junctions

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

Controlling the thickness of Josephson tunnel barriers with atomic layer deposition

SuperGaN: Synthesis of NbTiN/GaN/NbTiN Tunnel Junctions

Dynamic Versus Static Oxidation of Nb/Al-AlO$_x$/Nb Trilayer

Probing the Nucleation of Al2O3 in Atomic Layer Deposition on Aluminum for Ultrathin Tunneling Barriers in Josephson Junctions

Tunneling studies of NbAl superconducting proximity-effect bilayers

Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

Synthesis of nanocrystalline d-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive DC sputtering at room temperature

Titanium nitride as a seed layer for Heusler compounds

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Penetration depth and critical fields in superconducting NbTi thin films grown by co-sputtering at room temperature

van der Waals epitaxy of 2D h -AlN on TMDs by atomic layer deposition at 250 °C

Epitaxial Superconducting Δ-Mon Films Grown by a Chemical Solution Method.

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Tunneling Magnetoresistance of Co Granules in AlN/Co/AlN Type Discontinuous Films

Spectroscopy of bulk and few-layer superconducting NbSe$_2$ with van der Waals tunnel junctions

Structural transitions in superconducting NbTiN thin films