Abstract:In this work, the structural and mechanical properties of ternary Mo-Al-N alloys are investigated by combining thin film growth experiments and density functional theory (DFT) calculations. Mo1−xAlxNy thin films (∼300 nm thick), with various Al fractions ranging from x = 0 to 0.5 and nitrogen-to-metal (Al + Mo) ratio ranging from y = 0.78 to 1.38, were deposited by direct-current reactive magnetron cosputtering technique from elemental Mo and Al targets under Ar + N2 plasma discharges. The Al content was varied by changing the respective Mo and Al target powers, at a fixed N2 (20 SCCM) and Ar (25 SCCM) flow rate, and using two different substrate temperatures Ts = 350 and 500 °C. The elemental composition, mass density, crystal structure, residual stress state, and intrinsic (growth) stress were examined by wavelength dispersive x-ray spectroscopy, x-ray reflectivity, x-ray diffraction, including pole figure and <math> si n 2 ψ</math> measurements, and real-time in situ wafer curvature. Nanoindentation tests were carried out to determine film hardness H and elastic modulus EIT, while the shear elastic constant C44 was measured selectively by surface Brillouin light spectroscopy. All deposited Mo1−xAlxNy films have a cubic rock-salt crystal structure and exhibit a fiber-texture with a [001] preferred orientation. The incorporation of Al is accompanied by a rise in nitrogen content from 44 to 58 at. %, resulting in a significant increase (2%) in the lattice parameter when x increases from 0 to 0.27. This trend is opposite to what DFT calculations predict for cubic defect-free stoichiometric Mo1−xAlxN compounds and is attributed to variation in point defect concentration (nitrogen and metal vacancies) when Al substitutes for Mo. Increasing Ts from 350 to 500 °C has a minimal effect on the structural properties and phase composition of the ternary alloys but concurs to an appreciable reduction of the compressive stress from −5 to −4 GPa. A continuous increase and decrease in transverse sound velocity and mass density, respectively, lead to a moderate stiffening of the shear elastic constant from 130 to 144 GPa with increasing Al fraction up to x = 0.50, and a complex and nonmonotonous variation of H and EIT is observed. The maximum hardness of ∼33 GPa is found for the Mo0.81Al0.19N1.13 film, with nitrogen content close to the stoichiometric composition. The experimental findings are explained based on structural and elastic constant values computed from DFT for defect-free and metal- or nitrogen-deficient rock-salt MoAlN compounds.

Synthesis of nanocrystalline d-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive DC sputtering at room temperature

Epitaxial Superconducting Δ-Mon Films Grown by a Chemical Solution Method.

Controlling Crystal Structure and Oxidation State in Molybdenum Nitrides Through Epitaxial Stabilization

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

Effect of the nitrogen-argon gas mixtures on the superconductivity properties of reactively sputtered molybdenum nitride thin films

Low-temperature (<300 C) growth and characterization of single-[100]-oriented Mn-Co-Ni-O thin films

Studies of annealing impact on the morphological, opto-dielectric and mechanical behaviors of molybdenum-doped CrN coatings

Structure, stress, and mechanical properties of Mo-Al-N thin films deposited by dc reactive magnetron cosputtering: Role of point defects

Thermal evolution of nanocrystalline co-sputtered Ni-Zr alloy films: Structural, magnetic and MD simulation studies

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

Nanoindentation of single crystalline Mo: Atomistic defect nucleation and thermomechanical stability

Atomic layer deposition and superconducting properties of NbSi films

Synthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase

Magnetic Origin of Phase Stability in Cubic Γ-Mon

Low temperature deformation of MoSi$_2$ and the effect of Ta, Nb and Al as alloying elements

Vapor–Liquid–Solid Growth of Thin and Epitaxial Transition Metal Nitride Nanosheets for Catalysis and Energy Conversion

Synthesis of Samarium Nitride Thin Films on Magnesium Oxide (001) Substrates Using Molecular Beam Epitaxy

Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

Low temperature synthesis of plasmonic molybdenum nitride nanosheets for surface enhanced Raman scattering

Superconducting Energy Scales and Anomalous Dissipative Conductivity in Thin Films of Molybdenum Nitride