Controlling Crystal Structure and Oxidation State in Molybdenum Nitrides Through Epitaxial Stabilization

Hongmei Luo,Guifu Zou,Haiyan Wang,Joon Hwan Lee,Yuan Lin,Huisheng Peng,Qianglu Lin,Shuguang Deng,Eve Bauer,T. Mark McCleskey,Anthony K. Burrell,Quanxi Jia
DOI: https://doi.org/10.1021/jp2048376
2011-01-01
The Journal of Physical Chemistry C
Abstract:Epitaxial molybdenum nitride films with different crystal structures and chemical compositions were successfully synthesized by a chemical solution deposition technique. Hexagonal MoN was stabilized on c-cut sapphire (Al(2)O(3)) but cubic Mo(2)N on (001) SrTiO(3) even though exactly the same Mo-polymer precursor solution and the processing parameters (such as the annealing temperature and environment) were used. Both X-ray diffraction and high-resolution transmission electron microscopy confirmed the growth of epitaxial molybdenum nitride films with an epitaxial relationship between the film and the substrate as (0001)(MoN)parallel to(0001)(Al2O3) and [10 (1) over bar0](MoN)parallel to[11 (2) over bar0](Al2O3) for MoN on c-cut Al(2)O(3) and (001)(Mo2N)parallel to(001)(STO) and [111](Mo2N)parallel to[111](STO) for Mo(2)N on SrTiO(3). The formation of epitaxial molybdenum nitride films with different oxidation states resulted in very different electrical properties: a superconducting transition temperature of 12 K for MoN, whereas it was 4.5 K for Mo(2)N.
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