Abstract:The recent growth of two-dimensional (2D) layered crystals of MoSi2N4 and WSi2N4 has sparked significant interest due to their outstanding properties and potential applications. This development has paved the way for a new and large family of 2D materials with a general formula of MA2Z 4. In this regard, motivated by this exciting family, we propose two structural phases (1T-and 1H -) of M Si2N4 (M = Ge, Sn, and Pb) monolayers and investigate their structural, vibrational, mechanical, electronic and optical properties by using first-principles methods. The two phases have similar cohesive energies, while the 1T structures are found to be more energetically favorable than their 1H counterparts. The analysis of phonon spectra and ab initio molecular dynamics simulations indicate that all the suggested monolayers, except for 1H -GeSi2N4, are dynamically and thermally stable even at elevated temperatures. The elastic stability and mechanical properties of the proposed crystals are examined by calculating their elastic constants (Cij), in-plane stiffness (Y2D), Poisson's ratio (ν), and ultimate tensile strain (UTS). Remarkably, the considered systems exhibit prominent mechanical features such as substantial in-plane stiffness and high UTS. The calculated electronic band structures reveal that both the 1T- and 1H -M Si2N4 nanosheets are wide-band-gap semiconductors and their energy band gaps span from visible to ultraviolet region of the optical spectrum, suitable for high-performance nanoelectronic device applications. Lastly, the analysis of optical properties shows that the designed systems have isotropic optical spectra, and depending on the type of the system, robust absorption of ultraviolet and visible light (particularly in 1H -PbSi2N4 monolayer) is predicted. Our study not only introduces new members to the family of 2D MA2Z 4 crystals but also unveils their intriguing physical properties and suggests them as promising candidates for diverse nanomechanical and optoelectronic applications.

Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials

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