Fabrication on Nb/A1-AlO_X/Nb tunnel junction

Xiao Wei,Cao Chunhai,Li Mengyue,Xu Qinyin,Lu Yapeng,Kang Lin,Xu Weiwei,Chen Jian,Wu Peiheng
2012-01-01
Abstract:By improving etching process and insulating layer growth process,we fabricated superconducting tunnel junctions with good performance.In order to decrease the etching of oxide layer and substrate during RIE,CF4 was used as etching gas.SiO2 is grown by using PECVD,to improve the performance of SiO2 insulation layer.Greatly improve the performance of the tunnel junction.
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