Abstract:In this paper, we report on a systematic study of the inductance and magnetic field penetration depth (λ) of polycrystalline NbN superconducting thin films. By employing a four-metal-layer fabrication process specifically designed for all-NbN SFQ circuits, we constructed a Superconducting Quantum Interference Device (SQUID) loop composed of two parallel NbN SNS junctions, NbN microstrips, and NbN ground planes for precise inductance measurement. At 4.2 K, as the linewidth increases from 1 μm to 30 μm, the inductance per unit length (Lu) of NbN microstrips significantly decreases, for example, the Lu of 250 nm-thick NbN microstrips drops from 0.907 pH/μm to 0.047 pH/μm. Compared to Nb, the Lu of polycrystalline NbN microstrips is approximately two to three times that of Nb, offering an advantage for manufacturing smaller superconducting inductors. Furthermore, we conducted simulation analysis using InductEx software to extract the λ of NbN films of varying thicknesses. The results indicate that as the film thickness increased from 45 nm to 600 nm, λ initially decreased sharply and then stabilized, with values ranging from 430 nm to 323 nm. Notably, once the film thickness exceeded 200 nm, λ remained essentially constant, even at a temperature of 10 K, where it showed good stability, albeit with a slight increase (about 50 nm) compared to 4.2 K. This dependence of λ on thickness is reasonably explained by considering the effects of NbN film thickness on the superconducting critical temperature and residual resistivity. These research findings not only deepen our understanding of the characteristics of superconducting films but also lay a solid foundation for the future design and manufacture of more compact superconducting circuits at the higher temperature of 10 K.

Fabrication of a strain-induced high performance NbN ultrathin film by a Nb5N6 buffer layer on Si substrate

Improvement of the Superconducting Properties of Nbn Thin Film on Single-Crystal Silicon Substrate by Using A Tin Buffer Layer

Effect of Buffer Layer on Thermal Recovery of Superconducting Nanowire Single-Photon Detector

Nb5N6 Buffered Superconducting NbN Nanowire Single-Photon Detector on Si Substrate

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

High Performance Ultra-Thin Niobium Films for Superconducting Hot-Electron Devices

Improvements of performance on sputter-coated niobium films for superconducting cavities by adding a NbN interlayer

Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature

Enhanced Superconductivity Induced by the Hexagonal-Array-Cooling-Shrinkage Effect

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

NbN Films on Flexible and Thickness Controllable Dielectric Substrates

Inductance and penetration depth measurements of polycrystalline NbN Films for all-NbN single flux quantum circuits

The study on the superconducting NbN nano-films on MgO and Si substrates

Evaluation of the superconducting characteristics of multi-layer thin-film structures of NbN and SiO$_2$ on pure Nb substrate

Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Characterization of thin-film NbN superconductor for single-photon detection by transport measurements

The Effect of Thickness of Niobium Isolation Layer on Properties of Copper-Based Nb3Sn Films

Fabrication on Nb/A1-AlO_X/Nb tunnel junction

Ultrathin Nbtin Films with High Ti Composition for Superconducting Nanowire Single Photon Detectors

Thermal excitation-induced micro/nano fabrication and material modification of superconducting Nb films