Fabrications and Characterizations of NbN/AlN/NbN Junctions for THz Applications

L. Kang
DOI: https://doi.org/10.1109/icimw.2006.368348
2006-01-01
Abstract:We present our process for fabricating NbN/AlN/NbN tunnel junctions on MgO substrates. The current-voltage (I-V) characteristics of junctions were measured, and together with the other characteristics in high frequency, especially in the terahertz band.
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