Abstract:Publication date: 13 July 2021 Source: Material Science Forum Vol. 1038 Author(s): Igor Ryshchenko, Larisa Lyashok, Alexey Vasilchenko, Artem Ruban, Leonid Skatkov Features of creation of porous nanostructured oxides of transition materials on an example of niobium are considered. It has been experimentally shown that variation in anodizing modes makes it possible to obtain non-porous and porous amorphous anodic oxide films (AOF) and films of the crystalline type. It is determined that the process of AOF formation on niobium, as well as its structure and properties depend on such parameters as the type of electrolyte, anodizing voltage, activator concentration, the duration of the process. It is confirmed that the presence of an activator in the electrolyte is a necessary and decisive factor in the process of forming a nanostructured anode oxide layer. To obtain a nanostructured surface of niobium oxide, a necessary condition is the introduction of fluoride into the electrolyte, but also an important task is to determine the type of compound with which F– ions are introduced into the electrolyte. It has been experimentally determined that the optimal solution for the rapid growth of porous crystalline oxide is a solution consisting of a background electrolyte in the form of 1M H2SO4 with the addition of a fluoride ion activator in the form of 0.5M NaF. The increase in the activator accelerates the formation of the crystal structure on the surface of niobium. It is shown that higher voltage and longer anodizing time leads to an increase in the size of microcones and their number on the surface of niobium. Optimal for the formation of porous crystalline oxide is a voltage of 60 V in the electrolyte 1M H2SO4 + 0.5M NaF for 2 hours.

Coulomb blockade effects in anodised niobium nanostructures

Charging effects in niobium nanostructures

Observation of Ionic Coulomb Blockade in Nanopores.

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation

Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an atomic force microscope

Single electron transistors with high quality superconducting niobium islands

Fabricating a Silicon Nanowire by Using the Proximity Effect in Electron Beam Lithography for Investigation of the Coulomb Blockade Effect

Carbon Nanotube Quantum Dots with Nb Contacts

Anisotropic superconductivity of niobium based on its response to non-magnetic disorder

A thermostable trilayer resist for niobium lift-off

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels

Consequences of niobium doping for the ferromagnetism and microstructure of anatase Co: TiO2 films

Classical Coulomb Blockade of A Silicon Nanowire Dot

Electrical breakdown of a dielectric for the formation of a superconducting nanocontact

Improved coherence in optically defined niobium trilayer-junction qubits

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

Effects of anisotropy and disorder on the superconducting properties of Niobium

Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$κ$ Dielectric Layer

Electrochemical Synthesis of Crystalline Niobium Oxide