Abstract:Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20 - 50 µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.

Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$κ$ Dielectric Layer

Heterointerface Engineered Electronic and Magnetic Phases of NdNiO 3 Thin Films

Ionic Liquid Gating-Tuned Superconductor–insulator Transition in PrBa2Cu3O7/La2CuO4 Bilayers

Gate Tuning of Electronic Phase Transitions in Two-DimensionalNbSe2

Surface Charge Writing and Nonvolatile Control of Superconductivity in a LaAlO3/KTaO3(111) Heterostructure

Tuning Of The Metal-Insulator Transition In Electrolyte-Gated Ndnio3 Thin Films

Electrolyte gating using ionic crystals: Demonstration of iontronics with ionic crystals

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Electrical gating of superconducting NbSe2 using SrTiO3-based field-effect transistors

On-demand nanoengineering of in-plane ferroelectric topologies

Full Control of Solid-State Electrolytes for Electrostatic Gating

Tuning metal/superconductor to insulator/superconductor coupling via control of proximity enhancement between NbSe2monolayers

Tuning metal/superconductor to insulator/superconductor coupling via control of proximity enhancement between NbSe$_2$ monolayers

Electrical gating of superconducting NbSe<sub>2</sub> using SrTiO<sub>3</sub>-based field-effect transistors

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

A high-mobility electronic system at an electrolyte-gated oxide surface

High-energy electron injection in top-gated niobium microbridges for enhanced power efficiency and localized control

Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage

Large tuneable exchange fields due to purely paramagnetically limited domain wall superconductivity