Abstract:The epitaxial NdNi1-xCoxO3 (0 ≤ x ≤ 0.10) thin films on (001) LaAlO3 and (001) SrTiO3 substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO3 thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (TMI) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

Tuning Of The Metal-Insulator Transition In Electrolyte-Gated Ndnio3 Thin Films

Heterointerface Engineered Electronic and Magnetic Phases of NdNiO3 Thin Films

Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

Control of the metal-insulator transition in NdNiO$_3$ thin films through the interplay between structural and electronic properties

Metal-insulator Transition in Epitaxial NdNiO3 Thin Film: A Structural, Electrical and Optical Study

Tuning the Metal-Insulator Transition Via Epitaxial Strain and Co Doping in NdNiO3 Thin Films Grown by Polymer-Assisted Deposition

Large tuning of the optical properties of nanoscale NdNiO3 via electron doping

Manipulating the Metal-To-Insulator Transition of Ndnio3 Films by Orbital Polarization

Tunable Metal-Insulator Transition in Nd1−xYxNiO3 (x = 0.3, 0.4) Perovskites Thin Film at Near Room Temperature

Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$κ$ Dielectric Layer

Light Tuning of the Resistance of NdNiO3 Films with CoFe2O4 Capping

Suppression of electronic susceptibility in metal-Mott insulator alternating material, (Me-3,5-DIP)[Ni(dmit)2]2

Metal-insulator-metal Transition in NdNiO3 Films Capped by CoFe2O4

Temperature-sensing array using the metal-to-insulator transition of NdxSm1−xNiO3

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Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

Anisotropic-strain-controlled Metal-Insulator Transition in Epitaxial NdNiO3 Films Grown on Orthorhombic NdGaO3 Substrates