Abstract:Optical control of exotic properties in strongly correlated electron materials is very attractive owing to their potential applications in optical and electronic devices. Herein, we demonstrate a vertical heterojunction made of a correlated electron oxide thin film VO2 and a conductive 0.05 wt% Nb-doped TiO2 single crystal, whose metal-insulator transition (MIT) across the nanoscale heterointerface can be efficiently modulated by visible light irradiation. The magnitude of the MIT decreases from ~350 in the dark state to ~7 in the illuminated state, obeying a power law with respect to the light power density. The junction resistance is switched in a reversible and synchronous manner by turning light on and off. The optical tunability of it is also exponentially proportional to the light power density, and a 320-fold on/off ratio is achieved with an irradiance of 65.6 mW cm−2 below the MIT temperature. While the VO2 thin film is metallic above the MIT temperature, the optical tunability is remarkably weakened, with a one-fold change remaining under light illumination. These results are co-attributed to a net reduction (~15 meV) in the apparent barrier height and the photo-carrier-injection-induced metallization of the VO2 heterointerface through a photovoltaic effect, which is induced by deep defect level transition upon the visible light irradiance at low temperature. Additionally, the optical tunability is minimal, resulting from the quite weak modulation of the already metallic band structure in the Schottky-type junction above the MIT temperature. This work enables a remotely optical scheme to manipulate the MIT, implying potential uncooled photodetection and photoswitch applications.

Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics

Heterointerface Engineered Electronic and Magnetic Phases of NdNiO 3 Thin Films

Electronically Amplified Electron-Phonon Interaction and Metal-Insulator Transition in Perovskite Nickelates

Ground state oxygen holes and the metal-insulator transition in the negative charge transfer rare-earth nickelates

In-situ investigation on the oxygen vacancy-driven topotactic phase transition in charge-orbital ordered Nd0.5Sr0.5MnO3 films

Large tuning of the optical properties of nanoscale NdNiO3 via electron doping

Metal-insulator Transition in Epitaxial NdNiO3 Thin Film: A Structural, Electrical and Optical Study

Photoinduced Phase Transition in Infinite‐Layer Nickelates

Carrier localization in perovskite nickelates from oxygen vacancies

Phase Transition Engineering of Vanadium Dioxide Induced by Oxygen Vacancies

Structurally Triggered Metal-Insulator Transition in Rare-Earth Nickelates

Oxygen vacancy induced site-selective mott transition in lanio3

Vacancy defect modulation in hot-casted NiO film for efficient inverted planar perovskite solar cells

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Tunable Metal-Insulator Transition in Nd1−xYxNiO3 (x = 0.3, 0.4) Perovskites Thin Film at Near Room Temperature

Resistivity modulation of perovskite samarium nickelate with high-valence cations and the underlying mechanism

Thermally Reentrant Crystalline Phase Change in Perovskite-Derivative Nickelate Enabling Reversible Switching of Room-Temperature Electrical Resistivity

Combined Effect of Temperature Induced Strain and Oxygen Vacancy on Metal‐Insulator Transition of VO 2 Colloidal Particles

Control of the metal-insulator transition in NdNiO$_3$ thin films through the interplay between structural and electronic properties

Nonvolatile manipulation of electronic and ferromagnetic properties of NiO–Ni epitaxial film by ferroelectric polarization charge

Reversible Optical Control of the Metal-Insulator Transition Across the Epitaxial Heterointerface of a VO2/Nb:TiO2 Junction