Abstract:By doping engineering, colossal resistance switching and lattice modulation are achieved in Sr‐doped Nd0.8Sr0.2NiO3 (NSNO) films at full temperature range during ionic liquid gating. Further, resistance switching at 2 K is two orders of magnitude higher than that at 300 K. Moreover, NSNO exhibits faster switching speed than undoped NdNiO3. The findings provide a new route for oxide electronics. How to promote the resistance switching ratio, enlarge the operating temperature range and accelerate the switching speed is at the forefront of ionic gating electronics. Usually, most attention has been paid to materials with metal‐to‐insulator transition (MIT), e.g., VO2 and SmNiO3. Here, Sr‐doped nickelate (Nd0.8Sr0.2NiO3) films which do not exhibit MIT are used for electric field control of H‐doping and to detect the variation of resistance, lattice, and electronic structures. The experimental results directly show a giant resistive switching by more than 105 at the full temperature range (2 K–300 K) and lattice modulation by 3.4%. More importantly, much faster switching speeds can be achieved in Nd0.8Sr0.2NiO3 devices than in nondoped NdNiO3 ones. Such high switching performance is demonstrated to arise from strongly suppressed Ni–O hybridization after H doping. The results of this study provide a new material paradigm for developing energy‐efficient neuromorphic computing. Further, the doping effect on device performance also suggests a novel approach to develop correlated perovskite oxide transistors in order to fulfill practical applications.

Resistivity modulation of perovskite samarium nickelate with high-valence cations and the underlying mechanism

Investigation of the non-volatile resistance change in noncentrosymmetric compounds

Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Displacive Phase Transitions in Infinite-Layer Nickelates from First- and Second-Principles Calculations

Integration of Oxide Semiconductor Thin Films with Relaxor-based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties.

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides

Giant Resistive Switching and Lattice Modulation at Full Temperature Range in a Sr‐Doped Nickelate Oxide Transistor

Suppressing Ion Migration in Metal Halide Perovskite Via Interstitial Doping with a Trace Amount of Multivalent Cations

Interfacial Charge Engineering in Ferroelectric‐Controlled Mott Transistors

Controlling electronic properties of hexagonal manganites through aliovalent doping and thermoatmospheric history

Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN‐PT Single‐Crystal‐Based Field Effect Transistors Via Electric Charge Mediation

Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

Metal–insulator-transition Engineering by Modulation Tilt-Control in Perovskite Nickelates for Room Temperature Optical Switching

Electrochemically driven dual bipolar resistive switching in LaNiO<sub>3</sub>/SmNiO<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterostructures fabricated through selective area epitaxy

Nonvolatile manipulation of electronic and ferromagnetic properties of NiO–Ni epitaxial film by ferroelectric polarization charge

Electronically Amplified Electron-Phonon Interaction and Metal-Insulator Transition in Perovskite Nickelates

Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics

Manipulating The Magnetism And Resistance State Of Mn:Zno/Pb(Zr0.52ti0.48)O-3 Heterostructured Films Through Electric Fields

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

Reversible and Nonvolatile Manipulation of the Electronic Transport Properties of Topological Insulators by Ferroelectric Polarization Switching