Abstract:Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

Electrical gating of superconducting NbSe2 using SrTiO3-based field-effect transistors

Electrical gating of superconducting NbSe<sub>2</sub> using SrTiO<sub>3</sub>-based field-effect transistors

Electric Field Effect On Superconductivity In Atomically Thin Flakes Of Nbse2

Gate Tuning of Electronic Phase Transitions in Two-DimensionalNbSe2

Ionic Liquid Gating-Tuned Superconductor–insulator Transition in PrBa2Cu3O7/La2CuO4 Bilayers

Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure

Electric field control of superconductivity at the LaAlO<sub>3</sub>/KTaO<sub>3</sub>(111) interface

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Gate-Induced Interfacial Superconductivity in 1T-Snse2.

Superior carrier tuning in ultrathin superconducting materials by electric-field gating

Impact of on-chip gate voltage on the electric properties of NbTiN superconducting nanowire transistor

Gate Induced Superconductivity in Layered Material Based Electronic Double Layer Field Effect Transistors

An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe 2

The 45 K Onset Superconductivity and the Suppression of the Nematic Order in FeSe by Electrolyte Gating

Ising Superconductivity and Quantum Phase Transition in Macro-Size Monolayer NbSe2

Electric-field-controlled Superconductor-Ferromagnetic Insulator Transition

Gating the Charge State of Single Fe Dopants in the Topological Insulator Bi 2 Se 3 with a Scanning Tunneling Microscope

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction.

Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface

Electrical and Thermoelectric Study of Two-Dimensional Crystal of NbSe2

Intercalation-Induced Monolayer Behavior in Bulk NbSe2