Abstract:Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Further, these results point to new research directions, exploiting the STO domains ability to divert or even carry current.

Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface

Visible-light-enhanced gating effect at the LaAlO₃/SrTiO₃ interface.

Visible-light-enhanced gating effect at the LaAlO 3 /SrTiO 3 interface

Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

High-mobility Carriers and Superconductivity at the SrNbO 3-Srtio 3 Interface

High-mobility Carriers and Superconductivity at the SrNbO3−SrTiO3 Interface

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Tuning the Electrons at the Laalo3/Srtio3 Interface: from Growth to Beyond Growth

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Electronic Transport and Magnetoresistance of A Heterojunction Composed of La0.7ce0.3mno3 and 1 Wt% Nb-Doped Srtio3

Spin-Dependent Transport Across Co/Laalo3/Srtio3 Heterojunctions

Electric field control of superconductivity at the LaAlO<sub>3</sub>/KTaO<sub>3</sub>(111) interface

Anisotropic transport at the LaAlO3/SrTiO3 interface explained by microscopic imaging of channel-flow over SrTiO3 domains

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

Two-dimensional superconductivity at the surfaces of KTaO3 gated with ionic liquid

High valley-degeneracy electron gas at double perovskite - strontium titanate interface

The Effect of Fabrication Conditions on 2degs Transport Characteristics at Amorphous-Laalo3/ktao3 Interfaces

Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

Electronic transport in sub-micrometric channels at the LaAlO$_{3}$/SrTiO$_{3}$ interface

Tunable magnetic interactions in LaAlO3/SrTiO3 heterostructures by ionic liquid gating