Abstract:The carriers' mobility in 5d transition metal oxides‐based two‐dimensional electron systems is significantly hampered by the inevitable presence of defects. In order to overcome this challenge, ionic‐liquid gating at room temperature is applied to affect the oxygen vacancies and efficiently reduce any disorder at the interface. In this way, very high mobility of the amorphous LaAlO3/KTaO3 interface is demonstrated. Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin‐orbit coupling, 5d transition metal oxides‐based two‐dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high‐performance devices, in 5d‐oxides devices remains far behind their 3d‐oxides analogs. The carriers' mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, very high mobility (≈22 650 cm2 V−1 s−1) of 5d‐2DES confined at the LaAlO3/KTaO3 interface is reported. The high mobility, which is beyond the values observed in SrTiO3 2DESs in the same carrier‐density range, is achieved using the ionic‐liquid gating at room temperature. The authors postulate that the ionic‐liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back‐gate voltage, the authors reveal that the mobility follows the power‐law μ ∝ n1.2, indicating the very high quality of ionic‐liquid‐gated LaAlO3/KTaO3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high‐mobility electrons occupy the electronic sub‐bands emerging from the Ta:5d orbitals of KTaO3.

The Effect of Fabrication Conditions on 2degs Transport Characteristics at Amorphous-Laalo3/ktao3 Interfaces

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

High Mobility 2-Dimensional Electron Gas at LaAlO3/SrTiO3 Interface Prepared by Spin Coating Chemical Methods

Effects of Growth Temperature, Oxygen Pressure, Laser Fluence and Postannealing on Transport Properties of Superconducting LaAlO3/KTaO3(111) Interfaces

The Spatial Distribution of Two Dimensional Electron Gas at the LaTiO3/KTaO3 Interface

Tuning the Electrons at the Laalo3/Srtio3 Interface: from Growth to Beyond Growth

From LaAlO3/SrTiO3 to LaAlO3/KNbO3: Improving the Transport Properties of Two-Dimensional Electronic Gas in Created +1/+1 Interfaces

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO_{3} Interfaces.

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Two-Dimensional Electron Gas At Manganite Buffered Laalo3/Srtio3 (001) Interface By Spin Coating Chemical Methods

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Ionic Modulation at the LaAlO3/KTaO3 Interface for Extreme High‐Mobility Two‐Dimensional Electron Gas

Two-Dimensional Superconductivity at the LaAlO_{3}/KTaO_{3}(110) Heterointerface.

Unusual Electric and Optical Tuning of KTaO3-Based Two-Dimensional Electron Gases with 5d Orbitals.

Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

High-mobility two-dimensional electron gas in $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain