Abstract:The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel {\gamma}-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides.

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm$^2$/Vs at a perovskite oxide interface

Enabling 2D Electron Gas with High Room-Temperature Electron Mobility Exceeding 100 cm2 Vs-1 at a Perovskite Oxide Interface

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

Room Temperature Giant Charge-to-Spin Conversion at SrTiO3/LaAlO3 Oxide Interface

Enhanced Superconductivity in SrTiO$_3$-based Interfaces via Amorphous Al2O3 Capping

High valley-degeneracy electron gas at double perovskite - strontium titanate interface

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

High-mobility Electron Gas in Sr2TiO4/SrTiO3 Heterostructure Engineered by Vertical Ruddlesden–Popper Faults

The Effect of Fabrication Conditions on 2degs Transport Characteristics at Amorphous-Laalo3/ktao3 Interfaces

High Mobility 2-Dimensional Electron Gas at LaAlO3/SrTiO3 Interface Prepared by Spin Coating Chemical Methods

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

Epitaxial Growth of (1 1 1)-Oriented Spinel CoCr$_2$O$_4$/Al$_2$O$_3$ Heterostructures