Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Cheng Cao,Shengru Chen,Jun Deng,Gang Li,Qinghua Zhang,Lin Gu,Tian-Ping Ying,Er-Jia Guo,Jian-Gang Guo,Xiaolong Chen

DOI: https://doi.org/10.1088/0256-307x/39/4/047301

2022-01-01

Chinese Physics Letters

Abstract:Two-dimensional electron gas (2DEG) with high electron mobility is highly desired to study the emergent properties and to enhance future device performance. Here we report the formation of 2DEG with high mobility at the interface between rock-salt BaO and perovskite SrTiO3. The interface consists of the ionically compensated BaO1 – δ layer and the electronically compensated TiO2 layer, which is demonstrated as a perfect interface without lattice mismatch. The so-formed interface features metallic conductivity with ultralow square resistance of 7.3 × 10−4 Ω/◻ at 2 K and high residual resistance ratios R 300 K/R 2 K up to 4200. The electron mobility reaches 69000 cm2⋅V−1⋅s−1 at 2 K, leading to Shubnikov–de Haas oscillations of resistance. Density functional theory calculations reveal that the effective charge transfers from BaO to the Ti 3dxy orbital occur at the interface, leading to the conducting TiO2 layer. Our work unravels that BaO can adapt itself by removing oxygen to minimize the lattice mismatch and to provide substantial carriers to SrTiO3, which is the key to forming 2DEGs with high mobility at the interfaces.