Abstract:Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface.

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Tuning the Electrons at the Laalo3/Srtio3 Interface: from Growth to Beyond Growth

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Surface Amorphous Oxides Induced Electron Transfer into Complex Oxide Heterointerfaces

Anisotropic two-dimensional electron gas at SrTiO3(110) protected by its native overlayer

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Fully Optical Modulation of the Two-Dimensional Electron Gas at the Γ-Al2o3/srtio3 Interface.

Metallic capped quasi-two-dimensional electron gas in a SrTiO 3 -based heterostructure

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

A Termination-Insensitive and Robust Electron Gas at the Heterointerface of Two Complex Oxides

High Mobility 2-Dimensional Electron Gas at LaAlO3/SrTiO3 Interface Prepared by Spin Coating Chemical Methods

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Formation of Quasi-Two-dimensional Electron Gas at the Interface of ZnO/Ga2O3 Heterostructure

High stability 2D electron gases formed in Si3N4/Al//KTaO3 heterostructures: synthesis and in-depth interfacial characterization

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Manipulation of 2DEG at double-doped high-entropy heterointerfaces